Discrete IGBT Fuji Electric FGW75XS65C optimized for UPS PV power conditioners and inverter welding machine
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Product Description
Fuji Electric FGW75XS65C Discrete IGBT
The Fuji Electric FGW75XS65C is a Discrete IGBT from the XS-series, designed for applications requiring low power loss, reduced switching surge and noise, and high reliability. It is suitable for use in Uninterruptible Power Supplies (UPS), PV Power Conditioners, and Inverter Welding Machines.
Product Attributes
- Brand: Fuji Electric
- Series: XS-series
- Package: TO-247-P/TO-247-P2
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions | Remarks |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Collector-Emitter Voltage | VCES | 650 | V | ||
| Gate-Emitter Voltage | VGES | ± 20 | V | ||
| Transient Gate-Emitter Voltage | ± 30 | V | tp < 1 µs | ||
| DC Collector Current | IC@25 | 115 | A | TC = 25 °C | |
| DC Collector Current | IC@100 | 75 | A | TC = 100 °C | |
| Pulsed Collector Current | ICP | 300 | A | Note *1 | |
| Diode Forward Current | IF@25 | 118 | A | ||
| Diode Forward Current | IF@100 | 75 | A | ||
| Diode Pulsed Current | IFP | 300 | A | Note *1 | |
| IGBT Max. Power Dissipation | Ptot_IGBT | 437 | W | TC = 25 °C | |
| FWD Max. Power Dissipation | Ptot_FWD | 327 | W | TC = 25 °C | |
| Operating Junction Temperature | Tvj | -40 ~ +175 | °C | ||
| Storage Temperature | Tstg | -55 ~ +175 | °C | ||
| Electrical Characteristics | |||||
| Zero Gate Voltage Collector Current | ICES | 250 µA | VCE = 650 V, VGE = 0 V, Tvj = 25 °C | ||
| Zero Gate Voltage Collector Current | ICES | 2 mA | VCE = 650 V, VGE = 0 V, Tvj = 175 °C | ||
| Gate-Emitter Leakage Current | IGES | 200 nA | VCE = 0 V, VGE = ± 20 V | ||
| Gate-Emitter Threshold Voltage | VGE(th) | 3.4 ~ 4.6 | V | VCE = 20 V, IC = 75 mA | Typ. 4.0 |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.35 ~ 1.7 V | VGE = 15 V, IC = 75 A, Tvj = 25 °C | Typ. 1.35 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.5 | V | VGE = 15 V, IC = 75 A, Tvj = 125 °C | Typ. |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.6 | V | VGE = 15 V, IC = 75 A, Tvj = 175 °C | Typ. |
| Input Capacitance | Cies | 5940 pF | VCE = 25 V, VGE = 0 V, f = 1 MHz | Typ. | |
| Output Capacitance | Coes | 134 pF | Typ. | ||
| Reverse Transfer Capacitance | Cres | 60 pF | Typ. | ||
| Gate Charge | QG | 300 nC | VCC = 520 V, IC = 75 A, VGE = 15 V | Typ. | |
| Turn-On Delay Time | td(on) | 44 ns | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. Energy loss include “tail” and FWD reverse recovery. | |
| Rise Time | tr | 58 ns | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. | |
| Turn-Off Delay Time | td(off) | 340 ns | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. | |
| Fall Time | tf | 28 ns | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. | |
| Turn-On Energy | Eon | 1.3 mJ | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. | |
| Turn-Off Energy | Eoff | 0.94 mJ | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. | |
| Turn-On Delay Time | td(on) | 44 ns | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. Energy loss include “tail” and FWD reverse recovery. | |
| Rise Time | tr | 54 ns | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. | |
| Turn-Off Delay Time | td(off) | 380 ns | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. | |
| Fall Time | tf | 46 ns | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. | |
| Turn-On Energy | Eon | 1.6 mJ | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. | |
| Turn-Off Energy | Eoff | 1 mJ | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | Typ. | |
| Forward Voltage Drop | VF | 1.7 ~ 2.15 V | IF = 75 A, Tvj = 25 °C | Typ. 1.7 | |
| Forward Voltage Drop | VF | 1.78 V | IF = 75 A, Tvj = 125 °C | Typ. | |
| Forward Voltage Drop | VF | 1.78 V | IF = 75 A, Tvj = 175 °C | Typ. | |
| Diode Reverse Recovery Time | trr | 90 ns | VCC = 400 V, IF = 37.5 A, -diF/dt = 500 A/µs, Tvj = 25 °C | Typ. | |
| Diode Reverse Recovery Charge | Qrr | 1.1 µC | VCC = 400 V, IF = 37.5 A, -diF/dt = 500 A/µs, Tvj = 25 °C | Typ. | |
| Diode Reverse Recovery Time | trr | 134 ns | VCC = 400 V, IF = 37.5 A, -diF/dt = 500 A/µs, Tvj = 150 °C | Typ. | |
| Diode Reverse Recovery Charge | Qrr | 2.4 µC | VCC = 400 V, IF = 37.5 A, -diF/dt = 500 A/µs, Tvj = 150 °C | Typ. | |
| Thermal Resistance | |||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | 50 | °C/W | Max. | |
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | 0.343 | °C/W | Max. | |
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | 0.459 | °C/W | Max. | |
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