discrete IGBT Fuji Electric FGW40N120WD for in uninterruptible power supplies and power conditioners
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Product Description
Fuji Electric FGW40N120WD Discrete IGBT
The Fuji Electric FGW40N120WD is a high-speed Discrete IGBT from the W series, designed for demanding applications requiring low power loss, reduced switching surge and noise, and high reliability. Its robust construction ensures excellent ruggedness, including high RBSOA and SCSOA capabilities. This IGBT is ideal for use in uninterruptible power supplies, PV power conditioners, and inverter welding machines.
Product Attributes
- Brand: Fuji Electric
- Model: FGW40N120WD
- Series: Discrete IGBT (High-Speed W series)
- Date: June 2015
Technical Specifications
| Item | Symbol | Characteristics | Units | Remarks |
| Absolute Maximum Ratings | ||||
| Collector-Emitter voltage | VCES | 1200 | V | |
| Gate-Emitter voltage | VGES | 20 | V | DC |
| Collector Current | IC@25 | 65 | A | TC=25C, Tj=150C |
| Collector Current | IC@100 | 40 | A | TC=100C, Tj=150C |
| Pulsed Collector Current | ICP | 160 | A | Note *1 |
| Turn-Off Safe Operating Area | 160 | A | VCE1200V, Tj175C | |
| Diode Forward Current | IF@25 | 36 | A | |
| Diode Forward Current | IF@100 | 20 | A | |
| Diode Pulsed Current | IFP | 160 | A | Note *1 |
| Short Circuit Withstand Time | tSC | 5 | s | VCC600V, VGE=15V Tj150C |
| IGBT Max. Power Dissipation | PD_IGBT | 430 | W | TC=25C |
| FWD Max. Power Dissipation | PD_FWD | 125 | TC=25C | |
| Operating Junction Temperature | Tj | -40~+175 | C | |
| Storage Temperature | Tstg | -55~+175 | C | |
| Electrical Characteristics | ||||
| Zero Gate Voltage Collector Current | ICES | 250 | A | VCE = 1200V, VGE = 0V, Tj=25C |
| Zero Gate Voltage Collector Current | ICES | 2 | mA | VCE = 1200V, VGE = 0V, Tj=175C |
| Gate-Emitter Leakage Current | IGES | 200 | nA | VCE = 0V, VGE = 20V |
| Gate-Emitter Threshold Voltage | VGE (th) | 5.0~7.0 | V | VCE = 20V, IC = 40mA |
| Collector-Emitter Saturation Voltage | VCE (sat) | 1.4~2.6 | V | VGE = 15V, IC = 40A, Tj=25C |
| Collector-Emitter Saturation Voltage | VCE (sat) | -2.6 | - | VGE = 15V, IC = 40A, Tj=175C |
| Input Capacitance | Cies | 1250~3750 | pF | VCE=25V VGE=0V f=1MHz |
| Output Capacitance | Coes | 55~165 | pF | VCE=25V VGE=0V f=1MHz |
| Reverse Transfer Capacitance | Cres | 17~51 | pF | VCE=25V VGE=0V f=1MHz |
| Gate Charge | QG | 60~180 | nC | VCC = 400V IC = 40A VGE = 15V |
| Turn-On Delay Time | td(on) | 16~48 | ns | Tj = 25C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Rise Time | tr | 27~81 | ns | Tj = 25C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Turn-Off Delay Time | td(off) | 89~267 | ns | Tj = 25C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Fall Time | tf | 20~60 | ns | Tj = 25C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Turn-On Energy | Eon | 1.4~4.2 | mJ | Tj = 25C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Turn-Off Energy | Eoff | 0.8~2.4 | mJ | Tj = 25C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Turn-On Delay Time | td(on) | 16~48 | ns | Tj = 150C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Rise Time | tr | 24~72 | ns | Tj = 150C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Turn-Off Delay Time | td(off) | 110~330 | ns | Tj = 150C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Fall Time | tf | 28~84 | ns | Tj = 150C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Turn-On Energy | Eon | 2.3~6.9 | mJ | Tj = 150C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Turn-Off Energy | Eoff | 1.2~3.6 | mJ | Tj = 150C, VCC = 600V, IC = 40A, VGE = 15V, RG = 10, L = 500H |
| Forward Voltage Drop | VF | 1.3~2.8 | V | IF=20A, Tj=25C |
| Forward Voltage Drop | VF | 1.0~2.6 | V | IF=20A, Tj=175C |
| Diode Reverse Recovery Time | trr1 | 21~55 | ns | VCC=30V IF = 3.0A -di/dt=200A/s |
| Diode Reverse Recovery Time | trr2 | 0.15~0.61 | s | VCC=600V IF=20A -diF/dt=200A/s Tj=25C |
| Diode Reverse Recovery Charge | Qrr | 0.38~1.52 | C | VCC=600V IF=20A -diF/dt=200A/s Tj=25C |
| Diode Reverse Recovery Time | trr2 | 0.26~1.06 | s | VCC=600V IF=20A -diF/dt=200A/s Tj=175C |
| Diode Reverse Recovery Charge | Qrr | 1.8~7.2 | C | VCC=600V IF=20A -diF/dt=200A/s Tj=175C |
| Thermal Resistance | ||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | - | 50 | C/W |
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | - | 0.347 | |
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | - | 1.191 | |
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