IGBT Module Fuji Electric 2MBI150VA-060-50 for Motor Drives Servo Amplifiers and Welding Applications
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Product Description
Product Overview
The Fuji Electric 2MBI150VA-060-50 is a high-speed switching IGBT module designed for voltage drive applications. It features a low inductance module structure and is suitable for various industrial applications including motor drives, servo amplifiers, uninterruptible power supplies, and welding machines.
Product Attributes
- Brand: Fuji Electric
- Model: 2MBI150VA-060-50
- Product Type: IGBT Module (V series)
- Origin: Japan (implied by website and language)
- Certifications: Not specified in the provided text.
- Material: Not specified in the provided text.
- Color: Not specified in the provided text.
Technical Specifications
| Items | Symbols | Conditions | Units | min. | typ. | max. |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter voltage | VCES | V | 600 | |||
| Gate-Emitter voltage | VGES | V | 20 | |||
| Collector current | IC | TC=100C | A | 150 | ||
| IC pulse | 1ms | A | 300 | |||
| -IC | A | 150 | ||||
| -IC pulse | 1ms | A | 300 | |||
| Collector power dissipation | PC | 1 device | W | 650 | ||
| Junction temperature | Tj | C | 175 | |||
| Operating junction temperature (under switching conditions) | Tjop | C | 150 | |||
| Case temperature | TC | C | 125 | |||
| Storage temperature | Tstg | C | -40 | 125 | ||
| Isolation voltage between terminal and copper base (*1) | Viso | AC : 1min. | VAC | 2500 | ||
| Screw torque Mounting (*2) | N m | 5.0 | ||||
| Screw torque Terminals (*3) | N m | 5.0 | ||||
| Electrical Characteristics | ||||||
| Zero gate voltage collector current | ICES | VGE = 0V, VCE = 600V | mA | 1.0 | ||
| Gate-Emitter leakage current | IGES | VCE = 0V, VGE = 20V | nA | 200 | ||
| Gate-Emitter threshold voltage | VGE (th) | VCE = 20V, IC = 150mA | V | 6.2 | 6.7 | 7.2 |
| Collector-Emitter saturation voltage (terminal) | VCE (sat) | VGE = 15V, IC = 150A, Tj=25C | V | 1.75 | 2.20 | |
| Collector-Emitter saturation voltage (terminal) | VCE (sat) | VGE = 15V, IC = 150A, Tj=125C | V | 2.05 | ||
| Collector-Emitter saturation voltage (terminal) | VCE (sat) | VGE = 15V, IC = 150A, Tj=150C | V | 2.25 | ||
| Collector-Emitter saturation voltage (chip) | VCE (sat) | VGE = 15V, IC = 150A, Tj=25C | V | 1.60 | 2.05 | |
| Collector-Emitter saturation voltage (chip) | VCE (sat) | VGE = 15V, IC = 150A, Tj=125C | V | 1.90 | ||
| Collector-Emitter saturation voltage (chip) | VCE (sat) | VGE = 15V, IC = 150A, Tj=150C | V | 2.00 | ||
| Internal gate resistance | RG (int) | 6 | ||||
| Input capacitance | Cies | VCE = 10V, VGE = 0V, f = 1MHz | nF | 9.7 | ||
| Turn-on time | ton | VCC = 300V, LS = 30nH, IC = 150A, VGE = 15V, RG = 9, Tj = 150C | nsec | 650 | ||
| tr | nsec | 300 | ||||
| tr (i) | nsec | 100 | ||||
| Turn-off time | toff | nsec | 600 | |||
| tf | nsec | 40 | ||||
| Forward on voltage (terminal) | VF | VGE = 0V, IF = 150A, Tj=25C | V | 1.70 | 2.15 | |
| Forward on voltage (terminal) | VF | VGE = 0V, IF = 150A, Tj=125C | V | 1.60 | ||
| Forward on voltage (terminal) | VF | VGE = 0V, IF = 150A, Tj=150C | V | 1.57 | ||
| Forward on voltage (chip) | VF | VGE = 0V, IF = 150A, Tj=25C | V | 1.60 | 2.05 | |
| Forward on voltage (chip) | VF | VGE = 0V, IF = 150A, Tj=125C | V | 1.50 | ||
| Forward on voltage (chip) | VF | VGE = 0V, IF = 150A, Tj=150C | V | 1.47 | ||
| Reverse recovery time | trr | IF = 150A | nsec | 200 | ||
| Thermal Resistance Characteristics | ||||||
| Thermal resistance (1device) IGBT | Rth(j-c) | C/W | 0.31 | |||
| Thermal resistance (1device) FWD | Rth(j-c) | C/W | 0.60 | |||
| Contact thermal resistance (1device) (*4) | Rth(c-f) | with Thermal Compound | C/W | 0.050 | ||
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