SOT23 PNP Bipolar Junction Transistor FUXINSEMI S9012 High hFE Linearity for Circuit Amplification

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Product Description

Product Overview

The S9012 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It offers high collector current capability and excellent hFE linearity, making it a complementary part to the S9013 NPN transistor. This device is suitable for various electronic circuits requiring amplification or switching.

Product Attributes

Brand: Fuxin (implied by www.fuxinsemi.com)
Part Number: S9012
Package Type: SOT-23
Transistor Type: PNP
Marking: 2T1

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				-40	V
Collector-Emitter Voltage	VCEO				-25	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current	IC				-500	mA
Collector Power Dissipation	PC				300	mW
Thermal Resistance (Junction to Ambient)	RJA			416	/W
Operation and Storage Temperature Range	TJ, Tstg		-55		+150
Collector-Base Breakdown Voltage	V(BR)CBO	IC=-0.1mA, IE=0	-40			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=-1mA, IB=0	-25			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=-0.1mA, IC=0	-5			V
Collector Cut-off Current	ICBO	VCB=-40V, IE=0			-0.1	uA
Collector Cut-off Current	ICEO	VCE=-20V, IB=0			-0.1	uA
Emitter Cut-off Current	IEBO	VEB=-5V, IC=0			-0.1	uA
DC Current Gain	hFE	VCE=-1V, IC=-50mA	120		400
Collector-Emitter Saturation Voltage	VCE(sat)	IC=-500mA, IB=-50mA			-0.6	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-500mA, IB=-50mA			-1.2	V
Transition Frequency	fT	VCE=-6V,IC=-20mA, f=30MHz		150		MHz
Collector Output Capacitance	Cob	VCB=-10V, IE=0, f=1MHz			5	pF