High collector current NPN transistor FUXINSEMI SS8550 in SOT-23 package for versatile applications
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Product Description
Product Overview
The Fuxin Semiconductor SS8050 is a high collector current NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers complementary characteristics to the SS8550 and is suitable for various electronic circuits requiring efficient current amplification.
Product Attributes
- Brand: Fuxin Semiconductor
- Package Type: SOT-23
- Marking Code: Y2
- Complementary to: SS8550
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=-100A, IE=0 | -40 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=-0.1mA, IB=0 | -25 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector Cut-off Current | ICBO | VCB=-40V, IE=0 | -100 | nA | ||
| Collector Cut-off Current | ICEO | VCE=-20V, IB=0 | -100 | nA | ||
| Emitter Cut-off Current | IEBO | VEB=-5V, IC=0 | -100 | nA | ||
| DC Current Gain | hFE(1) | VCE=-1V, IC=-100mA | 120 | 400 | ||
| hFE(2) | VCE=-1V, IC=-800mA | 40 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.5 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-800mA, IB=-80mA | -1.2 | V | ||
| Base-Emitter Voltage | VBE | VCE=-1V, IC=-10mA | -1 | V | ||
| Transition Frequency | fT | VCE=-10V,IC=-50mA , f=30MHz | 100 | MHz | ||
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 20 | pF | ||
| Collector Current | IC | Ta=25 | -1.5 | A | ||
| Collector Power Dissipation | PC | Ta=25 | 300 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 |
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