high power IGBT module Fuji Electric 7MBR50XPA120-50 with converter diode bridge and dynamic brake circuit
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The 7MBR50XPA120-50 is an IGBT module from the X series, designed for high-power applications. It features a PIM (Power Integrated Module) configuration, offering a compact solution with low VCE(sat) and suitability for P.C. Board mounting. This module integrates a Converter, Diode Bridge, and Dynamic Brake Circuit, making it versatile for various power conversion and control tasks.
Product Attributes
- Series: X series
- Certification: RoHS compliant
Technical Specifications
| Item | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| Collector Current (Continuous) - Converter | IC | TC=100C | 50 | A | ||
| Collector Power Dissipation - Converter | PC | 200 | W | |||
| Collector-Emitter Voltage - Converter | VCES | 1200 | V | |||
| Collector Current (Continuous) - Inverter | IC | TC=100C | 50 | A | ||
| Collector Power Dissipation - Inverter | PC | 200 | W | |||
| Collector-Emitter Voltage - Inverter | VCES | 1200 | V | |||
| Collector Current (Continuous) - Brake | IC | TC=100C | 35 | A | ||
| Collector Power Dissipation - Brake | PC | 135 | W | |||
| Collector-Emitter Voltage - Brake | VCES | 1200 | V | |||
| Gate-Emitter Voltage - Inverter, Brake | VGES | 20 | V | |||
| Junction Temperature | Tvj | 175 | C | |||
| Storage Temperature | Tstg | -40 | 125 | C | ||
| Isolation Voltage (Terminal to Base Plate) | Viso | A.C. : 1min. | 2500 | Vrms | ||
| Electrical Characteristics | ||||||
| Collector-Emitter Saturation Voltage - Inverter | VCE(sat) (chip) | IC=50A, VGE=15V, Tvj=25C | 1.70 | 1.95 | V | |
| Collector-Emitter Saturation Voltage - Inverter | VCE(sat) (chip) | IC=50A, VGE=15V, Tvj=125C | 1.95 | 2.25 | V | |
| Zero Gate Voltage Collector Current - Inverter | ICES | VCE=1200V, VGE=0V, Tvj=25C | 0.05 | 0.20 | mA | |
| Zero Gate Voltage Collector Current - Inverter | ICES | VCE=1200V, VGE=0V, Tvj=125C | 0.21 | mA | ||
| Gate-Emitter Threshold Voltage | VGE(th) | IC=50mA, VCE=20V | 6.5 | 8.0 | V | |
| Gate-Emitter Leakage Current | IGES | VCE=20V, VGE=15V | 0.1 | mA | ||
| Forward Voltage (chip) - Converter | VF (chip) | IF=50A, Tvj=25C | 1.85 | 2.00 | V | |
| Forward Voltage (chip) - Converter | VF (chip) | IF=50A, Tvj=125C | 1.75 | 1.95 | V | |
| Reverse Recovery Time - Converter | trr | IF=50A, VR=600V, VGE=+15/-15V, RG=18 | 0.18 | 0.27 | s | |
| Switching Time (Turn-on time) - Inverter | ton | VCC=600V, IC=50A, VGE=+15/-15V, RG=18 | 0.27 | 0.45 | s | |
| Switching Time (Turn-off time) - Inverter | toff | VCC=600V, IC=50A, VGE=+15/-15V, RG=18 | 0.27 | 0.45 | s | |
| Internal Gate Resistance | rg | 18 | ||||
| Capacitance (input) | Cies | VCE=20V, VGE=0V, f=1MHz | 5.3 | nF | ||
| Capacitance (output) | Coes | VCE=20V, VGE=0V, f=1MHz | 0.24 | nF | ||
| Capacitance (reverse transfer) | Cres | VCE=20V, VGE=0V, f=1MHz | 0.04 | nF | ||
| Thermistor Resistance | R | B value 3375K | 495 | 5000 | 520 | |
| Thermal Resistance Characteristics | ||||||
| Thermal Resistance (Junction-Case) - Inverter IGBT | Rth(j-c) | (1 device) | 0.59 | 0.71 | C/W | |
| Thermal Resistance (Junction-Case) - Inverter FWD | Rth(j-c) | (1 device) | 1.85 | C/W | ||
| Thermal Resistance (Junction-Case) - Converter Diode | Rth(j-c) | (1 device) | 1.85 | C/W | ||
| Thermal Resistance (Junction-Case) - Brake IGBT | Rth(j-c) | (1 device) | 0.71 | 0.85 | C/W | |
| Thermal Resistance (Junction-Case) - Brake FWD | Rth(j-c) | (1 device) | 1.85 | C/W | ||
| Thermal Resistance (Junction-Case) - Converter (1 IGBT + 1 FWD) | Rth(j-c) | (1 device) | 0.72 | C/W | ||
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina