Discrete IGBT Fuji Electric FGW50XS65C suitable for inverter welding machines and PV power conditioners
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Product Description
Product Overview
The Fuji Electric FGW50XS65C is a Discrete IGBT from the XS-series, designed for high-performance applications. It offers low power loss, reduced switching surge and noise, and high reliability. This IGBT is suitable for use in uninterruptible power supplies, PV power conditioners, and inverter welding machines.
Product Attributes
- Brand: Fuji Electric
- Series: XS-series
- Package: TO-247-P/TO-247-P2
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | Remarks |
| Absolute Maximum Ratings | |||||||
| Collector-Emitter Voltage | VCES | 650 | V | ||||
| Gate-Emitter Voltage | VGES | ± 20 | V | ||||
| Transient Gate-Emitter Voltage | tp < 1 µs | ± 30 | V | ||||
| DC Collector Current | IC@25 | TC = 25 °C | 77 | A | |||
| DC Collector Current | IC@100 | TC = 100 °C | 50 | A | |||
| Pulsed Collector Current | ICP | 200 | A | Note *1 | |||
| Turn-Off Safe Operating Area | VCE ≤ 650 V, Tvj ≤ 175 °C | - 200 | A | ||||
| Diode Forward Current | IF@25 | TC = 25 °C | 80 | A | |||
| Diode Forward Current | IF@100 | TC = 100 °C | 50 | A | |||
| Diode Pulsed Current | IFP | 200 | A | Note *1 | |||
| IGBT Max. Power Dissipation | Ptot_IGBT | TC = 25 °C | 290 | W | |||
| FWD Max. Power Dissipation | Ptot_FWD | TC = 25 °C | 216 | W | |||
| Operating Junction Temperature | Tvj | -40 | +175 | °C | |||
| Storage Temperature | Tstg | -55 | +175 | °C | |||
| Electrical Characteristics | |||||||
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V, VGE = 0 V, Tvj = 25 °C | 250 | µA | |||
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V, VGE = 0 V, Tvj = 175 °C | 2 | mA | |||
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGE = ± 20 V | 200 | nA | |||
| Gate-Emitter Threshold Voltage | VGE(th) | VCE = 20 V, IC = 50 mA | 3.4 | 4.0 | 4.6 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 50 A, Tvj = 25 °C | 1.35 | 1.7 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 50 A, Tvj = 125 °C | 1.5 | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 50 A, Tvj = 175 °C | 1.6 | V | |||
| Input Capacitance | Cies | VCE = 25 V, VGE = 0 V, f = 1 MHz | 4100 | pF | |||
| Output Capacitance | Coes | VCE = 25 V, VGE = 0 V, f = 1 MHz | 96 | pF | |||
| Reverse Transfer Capacitance | Cres | VCE = 25 V, VGE = 0 V, f = 1 MHz | 42 | pF | |||
| Gate Charge | QG | VCC = 520 V, IC = 50 A, VGE = 15 V | 210 | nC | |||
| Turn-On Delay Time | td(on) | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj= 25 °C | 32 | ns | Energy loss include “tail” and FWD reverse recovery. | ||
| Rise Time | tr | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj= 25 °C | 36 | ns | |||
| Turn-Off Delay Time | td(off) | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj= 25 °C | 240 | ns | |||
| Fall Time | tf | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj= 25 °C | 20 | ns | |||
| Turn-On Energy | Eon | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj= 25 °C | 0.6 | mJ | |||
| Turn-Off Energy | Eoff | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj= 25 °C | 0.38 | mJ | |||
| Turn-On Delay Time | td(on) | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj = 150 °C | 32 | ns | Energy loss include “tail” and FWD reverse recovery. | ||
| Rise Time | tr | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj = 150 °C | 24 | ns | |||
| Turn-Off Delay Time | td(off) | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj = 150 °C | 280 | ns | |||
| Fall Time | tf | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj = 150 °C | 21 | ns | |||
| Turn-On Energy | Eon | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj = 150 °C | 0.75 | mJ | |||
| Turn-Off Energy | Eoff | VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω, Tvj = 150 °C | 0.5 | mJ | |||
| Forward Voltage Drop | VF | IF = 50 A, Tvj = 25 °C | 1.7 | 2.15 | V | ||
| Forward Voltage Drop | VF | IF = 50 A, Tvj = 125 °C | 1.78 | V | |||
| Forward Voltage Drop | VF | IF = 50 A, Tvj = 175 °C | 1.78 | V | |||
| Diode Reverse Recovery Time | trr | VCC = 400 V, IF = 25 A, -diF/dt = 500 A/µs, Tvj = 25 °C | 74 | ns | |||
| Diode Reverse Recovery Charge | Qrr | VCC = 400 V, IF = 25 A, -diF/dt = 500 A/µs, Tvj = 25 °C | 0.8 | µC | |||
| Diode Reverse Recovery Time | trr | VCC = 400 V, IF = 25 A, -diF/dt = 500 A/µs, Tvj = 150 °C | 115 | ns | |||
| Diode Reverse Recovery Charge | Qrr | VCC = 400 V, IF = 25 A, -diF/dt = 500 A/µs, Tvj = 150 °C | 1.6 | µC | |||
| Thermal Resistance | |||||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | 50 | °C/W | ||||
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | 0.518 | °C/W | ||||
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | 0.693 | °C/W | ||||
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