High current Fuji Electric FGZ75XS65C Discrete IGBT for rugged inverter welding machine applications
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Product Description
Product Overview
The FGZ75XS65C is a Discrete IGBT from Fuji Electric's XS-series, designed for high reliability and ruggedness. It offers low power loss, reduced switching surge and noise, making it suitable for demanding applications such as uninterruptible power supplies, PV power conditioners, and inverter welding machines.
Product Attributes
- Brand: Fuji Electric
- Series: XS-series
- Product Type: Discrete IGBT
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | Remarks |
| Maximum Ratings and Characteristics | |||||||
| Collector-Emitter Voltage | VCES | 650 | V | ||||
| Gate-Emitter Voltage | VGES | ±20 | V | ||||
| Transient Gate-Emitter Voltage | tp < 1 µs | ±30 | V | ||||
| DC Collector Current | IC@25 | TC = 25 °C | 115 | A | |||
| DC Collector Current | IC@100 | TC = 100 °C | 75 | A | |||
| Pulsed Collector Current | ICP | 300 | A | Note *1 | |||
| Turn-Off Safe Operating Area | VCE ≤ 650 V, Tvj ≤ 175 °C | -300 | A | ||||
| Diode Forward Current | IF@25 | TC = 25 °C | 118 | A | |||
| Diode Forward Current | IF@100 | TC = 100 °C | 75 | A | |||
| Diode Pulsed Current | IFP | 300 | A | Note *1 | |||
| IGBT Max. Power Dissipation | Ptot_IGBT | TC = 25 °C | 437 | W | |||
| FWD Max. Power Dissipation | Ptot_FWD | TC = 25 °C | 327 | W | |||
| Operating Junction Temperature | Tvj | -40 | +175 | °C | |||
| Storage Temperature | Tstg | -55 | +175 | °C | |||
| Electrical Characteristics | |||||||
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V, VGE = 0 V, Tvj = 25 °C | - | - | 250 | µA | |
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V, VGE = 0 V, Tvj = 175 °C | - | - | 2 | mA | |
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGE = ±20 V | - | - | 200 | nA | |
| Gate-Emitter Threshold Voltage | VGE(th) | VCE = 20 V, IC = 75 mA | 3.4 | 4.0 | 4.6 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 25 °C | - | 1.35 | 1.70 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 125 °C | - | 1.50 | - | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 175 °C | - | 1.60 | - | V | |
| Input Capacitance | Cies | VCE = 25 V, VGE = 0 V, f = 1 MHz | - | 5940 | - | pF | |
| Output Capacitance | Coes | - | 134 | - | pF | ||
| Reverse Transfer Capacitance | Cres | - | 60 | - | pF | ||
| Gate Charge | QG | VCC = 520 V, IC = 75 A, VGE = 15 V | - | 300 | - | nC | |
| Turn-On Delay Time | td(on) | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 45 | - | ns | Energy loss include “tail” and FWD reverse recovery. |
| Rise Time | tr | - | 21 | - | ns | ||
| Turn-Off Delay Time | td(off) | - | 340 | - | ns | ||
| Fall Time | tf | - | 21 | - | ns | ||
| Turn-On Energy | Eon | - | 0.50 | - | mJ | ||
| Turn-Off Energy | Eoff | - | 0.74 | - | mJ | ||
| Turn-On Delay Time | td(on) | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 50 | - | ns | Energy loss include “tail” and FWD reverse recovery. |
| Rise Time | tr | - | 25 | - | ns | ||
| Turn-Off Delay Time | td(off) | - | 380 | - | ns | ||
| Fall Time | tf | - | 32 | - | ns | ||
| Turn-On Energy | Eon | - | 0.80 | - | mJ | ||
| Turn-Off Energy | Eoff | - | 1.00 | - | mJ | ||
| Forward Voltage Drop | VF | IF = 75 A, Tvj = 25 °C | - | 1.70 | 2.15 | V | |
| Forward Voltage Drop | VF | IF = 75 A, Tvj = 125 °C | - | 1.78 | - | V | |
| Forward Voltage Drop | VF | IF = 75 A, Tvj = 175 °C | - | 1.78 | - | V | |
| Diode Reverse Recovery Time | trr | VCC = 400 V, IF = 37.5 A, -diF/dt = 1500 A/µs, Tvj = 25 °C | - | 88 | - | ns | |
| Diode Reverse Recovery Charge | Qrr | - | 2.50 | - | µC | ||
| Diode Reverse Recovery Time | trr | VCC = 400 V, IF = 37.5 A, -diF/dt = 1400 A/µs, Tvj = 150 °C | - | 96 | - | ns | |
| Diode Reverse Recovery Charge | Qrr | - | 3.1 | - | µC | ||
| Thermal Resistance | |||||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | - | - | 50 | °C/W | ||
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | - | - | 0.343 | °C/W | ||
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | - | - | 0.459 | °C/W | ||
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Sellina