High reliability NPN transistor FUXINSEMI SS8050 suitable for various electronic circuit applications

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Product Description

Product Overview

The SS8050 is a general-purpose NPN silicon transistor, complementary to the SS8550. It is designed for a wide range of applications and features a marking code of 'Y1'.

Product Attributes

Brand: Fuxin Semiconductor
Type: NPN Silicon Transistor
Marking: Y1

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0			40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 0.1mA, IB=0			25	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0			5	V
Collector cut-off current	ICBO	VCB=40V, IE=0			0.1	A
Collector cut-off current	ICEO	VCE=20V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB= 5V, IC=0			0.1	A
DC current gain (hFE(1))	hFE(1)	VCE=1V, IC= 100mA	120		400
DC current gain (hFE(2))	hFE(2)	VCE=1V, IC= 800mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=800mA, IB= 80mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800mA, IB= 80mA			1.2	V
Transition frequency	fT	VCE=10V, IC= 50mA, f=30MHz		100		MHz
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				5	V
Collector Current	IC				1.5	A
Collector Power Dissipation	PC				300	mW
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150