China High collector current complementary PNP transistor FUXINSEMI SS8550-TA designed for general purpose for sale

High collector current complementary PNP transistor FUXINSEMI SS8550-TA designed for general purpose

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Product Description

Product Overview

The SS8550-TA is a complementary PNP bipolar transistor designed for general-purpose applications. It features high collector current capability and is complementary to the SS8050 NPN transistor.

Product Attributes

Brand: FUXIN
Origin: (Not specified)
Material: (Not specified)
Color: (Not specified)
Certifications: (Not specified)

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
V(BR)CBO	Collector-base breakdown voltage	IC=-100A, IE=0	-40			V
		V(BR)CEO	IC=-0.1mA, IB=0	-25			V
		V(BR)EBO	IE=-100A, IC=0	-5			V
ICBO	Collector cut-off current	VCB=-40V, IE=0	-100			nA
ICBO	Collector cut-off current	ICEO	VCE=-20V, IB=0	-100			nA
IEBO	Emitter cut-off current	VEB=-5V, IC=0	-100			nA
hFE	DC current gain	VCE=-1V, IC=-100mA	100	400
hFE	DC current gain	VCE=-1V, IC=-800mA	35
VCE(sat)	Collector-emitter saturation voltage	IC=-800mA, IB=-80mA	-0.5			V
VBE(sat)	Base-emitter saturation voltage	IC=-800mA, IB=-80mA	-1.3			V
VBE	Base-emitter voltage	VCE=-1V, IC=-10mA		-1		V
fT	Transition frequency	VCE=-10V,IC=-50mA , f=30MHz	150			MHz
Cob	Collector output capacitance	VCB=-10V, IE=0, f=1MHz	20			pF
MAXIMUM RATINGS
VCBO	Collector-Base Voltage		-40			V
VCEO	Collector-Emitter Voltage		-25			V
VEBO	Emitter-Base Voltage		-5			V
IC	Collector Current		-1.5			A
PD	Power Dissipation		625			mW
RJA	Thermal Resistance From Junction To Ambient		417			/W
Tj	Junction Temperature		150
Tstg	Storage Temperature		-55		+150