SOT23 packaged transistor FUXINSEMI S8550 designed for surface mount and complementary to S8050 transistor

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Product Description

Product Overview

This product is a high collector current transistor, complementary to the S8050, designed for general-purpose applications. It features a SOT-23 package for surface mounting.

Product Attributes

Brand: FUXINSEMICONDUCTOR
Package Type: SOT-23
Complementary to: S8050

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-Base Voltage	VCBO			-40	V
Collector-Emitter Voltage	VCEO			-25	V
Emitter-Base Voltage	VEBO			-5	V
Collector Current	IC			-0.5	A
Collector Power Dissipation	PC	Ta=25		300	mW
Thermal Resistance (Junction to Ambient)	RJA			417	/W
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	+150
Collector-base breakdown voltage	V(BR)CBO	IC = -100A, IE=0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC =-1mA, IB=0	-25		V
Emitter-base breakdown voltage	V(BR)EBO	IE= -100A, IC=0	-5		V
Collector cut-off current	ICBO	VCB= -40V, IE=0		-0.1	A
Collector cut-off current	ICEO	VCE= -20V, IB=0		-0.1	A
Emitter cut-off current	IEBO	VEB= -3V, IC=0		-0.1	A
DC current gain	hFE(1)	VCE= -1V, IC= -50mA	120	400
DC current gain	hFE(2)	VCE= -1V, IC= -500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=-500mA, IB= -50mA		-0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=-500mA, IB= -50mA		-1.2	V
Transition frequency	fT	VCE= -6V, IC= -20mA, f=30MHz		150	MHz