High Shock Load Withstand TRIAC FUXINSEMI BTB16-800BW 16A RMS Current for Inductive Load Control

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Product Description

Product Overview

The BTB16 Series are 16A, 3-quadrant TRIACs in a TO-220B package, designed with high ability to withstand shock loading of large currents and excellent commutation performance. These devices are especially recommended for use with inductive loads. Applications include washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

Brand: Fuxin Semiconductor (FS)
Package: TO-220B

Technical Specifications

Symbol	Parameter	BTB16-600BW	BTB16-800BW	Unit	Test Condition
VDRM	Repetitive peak off-state voltage	600	800	V
VRRM	Repetitive peak reverse voltage	600	800	V
IT(RMS)	RMS on-state current	16	16	A
ITSM	Non repetitive surge peak on-state current (full cycle, F=50Hz)	160	160	A
I2t	I2t value for fusing (tp=10ms)	140	140	A2s
dIT/dt	Critical rate of rise of on-state current (IG =2IGT)	100	100	A/s	--
IGM	Peak gate current	4	4	A
PG(AV)	Average gate power dissipation	1	1	W
TJ	Junction Temperature	-40 ~ +125	-40 ~ +125
TSTG	Storage Temperature	-40 ~ +150	-40 ~ +150
IGT	Gate trigger current	35 (BW) / 50 (B)	35 (BW) / 50 (B)	mA	VD =12V RL = 33 Tj =25 --
VGT	Gate trigger voltage	1.3	1.3	V	--
VGD	Gate non-trigger voltage	0.2	0.2	V	VD =VDRM Tj =125
IL	latching current	50 (B) / 70 (BW)	50 (B) / 70 (BW)	mA	IG =1.2IGT -
IL	latching current	60 (B) / 80 (BW)	60 (B) / 80 (BW)	mA	IG =1.2IGT
IH	Holding current	30 (B) / 50 (BW)	30 (B) / 50 (BW)	mA	IT =500mA
dVD/dt	Critical-rate of rise of commutation voltage	500 (BW) / 1000 (B)	500 (BW) / 1000 (B)	V/s	VD=2/3VDRM Gate Open Tj =125
VTM	Forward "on" voltage	1.55	1.55	V	ITM =23A tp=380s
IDRM	Repetitive Peak Off-State Current	5	5	A	VD =VDRM Tj=25
IRRM	Repetitive Peak Reverse Current	1	1	mA	VR =VRRM Tj=125
Rth(j-c)	Junction to case(AC)	1.2	1.2	/W
Rth(j-a)	Junction to ambient	60	60	/W