1 amp sensitive gate scr FUXINSEMI MCR100-8W with high shock loading and electromagnetic interference resistance

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Product Description

Product Overview

The MCR100-8W is a 1.0A sensitive gate SCR from Fuxin Semiconductor, designed with high shock loading capability and strong resistance to electromagnetic interference. It is suitable for various applications including power chargers, T-tools, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

Brand: Fuxin Semiconductor
Package: SOT-223-3L

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Repetitive peak off-state voltage	VDRM	600	V
Repetitive peak off-state voltage	VDRM	800	V
Repetitive peak reverse voltage	VRRM	600	V
Repetitive peak reverse voltage	VRRM	800	V
RMS on-state current	IT(RMS)	1.0	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	12	A
I2t value for fusing (tp=10ms)	I2t	0.72	A²s
Critical rate of rise of on-state current (IG =2IGT)	dIT/dt	50	A/s
Peak gate current	IGM	0.5	A
Average gate power dissipation	PG(AV)	0.1	W
Junction Temperature	TJ	-40 ~ +110
Storage Temperature	TSTG	-40 ~ +150
Gate trigger current	IGT	100	A	VD =12V, IT=10mA, Tj =25
Gate trigger voltage	VGT	0.8	V
Gate non-trigger voltage	VGD	0.2	V	VD =1/2VDRM, Tj =110
Latching current	IL	5	mA	VD =12V, IG=0.5mA, RGK=1k, Tj =25
Holding current	IH	4	mA
Critical-rate of rise of commutation voltage	dVD/dt	50	V/s	VD=2/3VDRM, Gate Open, Tj =110
Forward "on" voltage	VTM	1.7	V	ITM =2A, tp=380s
Repetitive Peak Off-State Current	IDRM	5	A	VD =VDRM, Tj=25
Repetitive Peak Reverse Current	IRRM	0.1	mA	VR =VRRM, Tj=110
Thermal resistance Junction to case	Rth(j-c)	20	/W	TYP.
Thermal resistance Junction to ambient	Rth(j-a)	60	/W	TYP.