NPN Transistor SOT23 Package FUXINSEMI MMBTA42 Suitable for Switching and Amplification Applications
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Product Description
MMBTA42 TRANSISTOR (NPN)
The MMBTA42 is an NPN transistor in a SOT-23 package, designed for high performance applications. It features a high breakdown voltage, low collector-emitter saturation voltage, and serves as a complementary part to the MMBTA92 (PNP). The device is suitable for various electronic circuits requiring reliable switching and amplification.
Product Attributes
- Brand: FUXINSEMICONDUCTOR
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A,IE=0 | 300 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 1mA, IB=0 | 300 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100A, IC=0 | 5 | V | |
| Collector cut-off current | ICBO | VCB=200V, IE=0 | 0.25 | A | |
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | |
| DC current gain | hFE(1) | VCE= 10V, IC= 1mA | 60 | ||
| DC current gain | hFE(2) | VCE= 10V, IC=10mA | 200 | ||
| DC current gain | hFE(3) | VCE=10V, IC=30mA | 60 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=20mA, IB= 2mA | 0.2 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC= 20mA, IB=2mA | 0.9 | V | |
| Transition frequency | fT | VCE= 20V, IC= 10mA, f=30MHz | 50 | MHz | |
| Collector-Base Voltage | VCBO | 300 | V | ||
| Collector-Emitter Voltage | VCEO | 300 | V | ||
| Emitter-Base Voltage | VEBO | 5 | V | ||
| Collector Current -Continuous | IC | 0.3 | A | ||
| Collector Power dissipation | PC | 0.35 | W | ||
| Thermal Resistance, junction to Ambient | RJA | 357 | /W | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | ||
| Collector Current-Peak | ICM | 0.5 | A |
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