Electronic Component FUXINSEMI KSP13 NPN Darlington Transistor with 30 Volt Collector Base Voltage

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Product Description

KSP13 NPN Darlington Transistor

The KSP13 is an NPN Darlington transistor, complementary to the KSP63. It is designed for various electronic applications requiring high current gain.

Product Attributes

Brand: Fuxin Semiconductor (inferred from www.fuxinsemi.com)
Complementary Part: KSP63

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	BVCBO	IC = 100 A, IE = 0			30	V
Collector-Emitter Voltage	BVCEO	IC = 1mA, IB = 0			30	V
Emitter-Base Voltage	BVEBO	IE = 100 A, IC = 0			10	V
Collector Current	IC				1.0	A
Collector Power Dissipation	PD	Ta=25			0.625	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		150
Collector Cut-off Current	ICBO	VCB = 30V, IE = 0			100	nA
Emitter Cut-off Current	IEBO	VEB = 10V, IC = 0			100	nA
DC Current Gain	hFE	VCE = 5V, IC = 10mA		5000
DC Current Gain	hFE	VCE = 5V, IC = 100mA		10000
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 100mA, IB = 0.1mA			1.5	V
Base-Emitter On Voltage	VBE(on)	VCE = 5V ,IC = 100mA		2.0		V
Transition Frequency	fT	VCE = 10V, Ic = 10mA, f=100MHz		125		MHZ

Package Dimensions

Symbol	Millimeter	Inches
Min.	Max.	Min.	Max.
A	3.30	3.70	0.130	0.146
A1	2.30	2.70	0.091	0.106
b	0.40	0.50	0.016	0.020
b1	0.50	0.70	0.020	0.028
c	0.35	0.45	0.014	0.018
D	4.45	4.70	0.175	0.185
E	4.40	4.65	0.173	0.183
e	1.17	1.37	0.046	0.054
e1	2.34	2.64	0.092	0.104
L	13.50	14.50	0.531	0.571
L1	1.80	2.20	0.071	0.087