Medium power amplification switching transistor FUXINSEMI MMBT5551 NPN silicon type with SOT23 package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MMBT5551 is a high voltage NPN silicon transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401 and offers excellent performance characteristics.
Product Attributes
- Brand: FUXINSEMICONDUCTOR
- Type: NPN Silicon Transistor
- Package: SOT-23
- Complementary to: MMBT5401
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=100A, IE=0 | 180 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=1mA, IB=0 | 160 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | ||
| Collector Cut-off Current | ICBO | VCB=120V, IE=0 | 50 | nA | ||
| Emitter Cut-off Current | IEBO | VEB=4V, IC=0 | 50 | nA | ||
| DC Current Gain | hFE(1) | VCE=5V, IC=1mA | 80 | |||
| hFE(2) | VCE=5V, IC=10mA | 100 | 300 | |||
| hFE(3) | VCE=5V, IC=50mA | |||||
| Collector-Emitter Saturation Voltage | VCE(sat)1 | IC=10mA, IB=1mA | 0.15 | V | ||
| VCE(sat)2 | IC=50mA, IB=5mA | 0.2 | V | |||
| Base-Emitter Saturation Voltage | VBE(sat)1 | IC=10mA, IB=1mA | 1 | V | ||
| VBE(sat)2 | IC=50mA, IB=5mA | 1 | V | |||
| Transition Frequency | fT | VCE=10V,IC=10mA, f=100MHz | 100 | 300 | MHz | |
| Collector Output Capacitance | Cob | VCB=10V, IE=0, f=1MHz | 6 | pF | ||
| Collector Power Dissipation | PC | Ta=25 | 300 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 416 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina