Dual transistor PNP PNP SOT363 package featuring FUXINSEMI BCM857BS for compact electronic circuits

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Product Description

Product Overview

The BCM8 57 BS 420 240 is a dual PNP+PNP transistor housed in a SOT-363 package. It offers the advantage of integrating two transistors into a single component, thereby reducing the number of components and board space required. This configuration also ensures no mutual interference between the transistors, making it suitable for applications where space and component count are critical.

Product Attributes

Marking: 3F
Type: DUAL TRANSISTOR (PNP+PNP)
Package: SOT-363
Brand: Fuxin (implied by www.fuxinsemi.com)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	Ic=-10A,IE=0	-50			V
Collector-emitter breakdown voltage	V(BR)CEO	Ic=-10mA,IB=0	-45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A,IC=0	-5			V
Collector cut-off current	ICBO	VCB=-30V,IE=0		-15	nA
DC current gain	hFE	VCE=-5V,IC=-2mA
Collector-emitter saturation voltage (1)	VCE(sat)(1)	IC=-10mA,IB=-0.5mA		-0.3		V
Collector-emitter saturation voltage (2)	VCE(sat)(2)	IC=-100mA,IB=-5mA		-0.65		V
Base-emitter voltage (1)	VBE(1)	VCE=-5V,IC=-2mA	-0.6	-0.75		V
Base-emitter voltage (2)	VBE(2)	VCE=-5V,IC=-10mA		-0.82		V
Transition frequency	fT	VCE=-5V,IC=-10mA,f=100MHz		200		MHz
Collector output capacitance	Cob	VCB=-10V,IE=0,f=1MHz		3.5		pF
Noise figure	NF	VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz		2.5		dB
Collector-Base Voltage	VCBO			-50		V
Collector-Emitter Voltage	VCEO			-45		V
Emitter-Base Voltage	VEBO			-5		V
Collector Current -Continuous	IC			-0.2		A
Collector Power Dissipation	PC			0.3		W
Thermal Resistance from Junction to Ambient	RJA			417		/W
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55		150