Electronic circuit NPN transistor GOODWORK MMBT5551 ideal for medium power amplification switching

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Product Description

MMBT5551 NPN TRANSISTOR

The MMBT5551 is an NPN transistor, complementary to the MMBT5401, designed for medium power amplification and switching applications. It offers reliable performance for various electronic circuits.

Product Attributes

Marking Type number: MMBT5551
Marking code: G1

Technical Specifications

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
VCBO	CollectorBase Voltage	IC = 100uA, IE = 0		180		V
VCEO	CollectorEmitter Voltage	IC = 1 mA, IB = 0		160		V
VEBO	EmitterBase Voltage	IE = 10uA, IC = 0		6		V
IC	Collector Current Continuous			600		mA
PC	Collector Power Dissipation	Ta=25		300		mW
RthJA	Thermal Resistance From Junction To Ambient			416		/W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55		+150
ICBO	Collector cut-off current	VCB = 120V, IE = 0			1	nA
IEBO	Emitter cut-off current	VEB = 4V, IC =0			1	nA
hFE1	DC current gain	VCE = 5V, IC =10mA	100
hFE2	DC current gain	IC = 50mA, IB = 5mA		100	300
hFE3	DC current gain	VCE = 5V, IC = 50mA		300
VCE(sat)1	Collector-emitter saturation voltage	IC = 10mA, IB =1mA		0.15		V
VCE(sat)2	Collector-emitter saturation voltage	IC = 50mA, IB = 5mA		0.2		V
VBE(sat)1	Base-emitter saturation voltage	IC = 10mA, IB =1mA		0.6		V
VBE(sat)2	Base-emitter saturation voltage	IC = 50mA, IB = 5mA		0.8		V
Cob	Collector output capacitance	VCB = 10V, IE = 0, f=1MHz			10	pF
fT	Transition frequency	VCE = 10V, IC = 10mA, f=100MHz		50		MHz