PNP transistor FUXINSEMI MMBT5401 in SOT23 package optimized for medium power amplification switching

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Product Description

MMBT5401 TRANSISTOR (PNP) SOT-23

The MMBT5401 is a PNP transistor in a SOT-23 package, designed for medium power amplification and switching applications. It is complementary to the MMBT5551 transistor.

Product Attributes

Marking: 2L

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Maximum Ratings	VCBO	Collector-Base Voltage			-160	V
	VCEO	Collector-Emitter Voltage			-150	V
	VEBO	Emitter-Base Voltage			-5	V
	IC	Collector Current			-0.6	A
	PC	Collector Power Dissipation			0.3	W
	RJA	Thermal Resistance from Junction to Ambient			416	/W
	TJ,Tstg	Operation Junction and Storage Temperature Range	-55		+150
Electrical Characteristics	V(BR)CBO	Collector-base breakdown voltage (IC=-100A, IE=0)	-160			V
	V(BR)CEO	Collector-emitter breakdown voltage (IC=-1mA, IB=0)	-150			V
	V(BR)EBO	Emitter-base breakdown voltage (IE=-10A, IC=0)	-5			V
	ICBO	Collector cut-off current (VCB=-120V, IE=0)			-0.1	A
	IEBO	Emitter cut-off current (VEB=-4V, IC=0)			-0.1	A
	hFE(1)	DC current gain (VCE=-5V, IC=-1mA)	80
	hFE(2)	DC current gain (VCE=-5V, IC=-10mA)	100		300
	VCE(sat)1	Collector-emitter saturation voltage (IC=-10mA, IB=-1mA)		-0.2		V
	VBE(sat)1	Base-emitter saturation voltage (IC=-10mA, IB=-1mA)		-1		V
	fT	Transition frequency (VCE=-5V,IC=-10mA, f=30MHz)	100			MHz

hFE Classification

RANK	L	H
RANGE	100-200	200-300

SOT-23 Package Information

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min.	Max.	Min.	Max.
A	0.900	1.150	0.035	0.045
A1	0.000	0.100	0.000	0.004
A2	0.900	1.050	0.035	0.041
b	0.300	0.500	0.012	0.020
c	0.080	0.150	0.003	0.006
D	2.800	3.000	0.110	0.118
E	1.200	1.400	0.047	0.055
E1	2.250	2.550	0.089	0.100
e	0.950 TYP.		0.037 TYP.
e1	1.800	2.000	0.071	0.079
L	0.550 REF.		0.022 REF.
L1	0.300	0.500	0.012	0.020