Switching Amplifier Transistor GOODWORK MMBT3904W NPN Silicon Epitaxial Planar for Electronic Circuit

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Product Description

Product Overview

The MMBT3904W is an NPN Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. It offers reliable performance in various electronic circuits.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Silicon Epitaxial Planar
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Collector Base Voltage	VCBO	60	V
Collector Emitter Voltage	VCEO	40	V
Emitter Base Voltage	VEBO	6	V
Collector Current	IC	200	mA
Total Power Dissipation	Ptot	200	mW	Ta = 25 OC
Junction Temperature	Tj	150	OC
Storage Temperature Range	Tstg	-55 to +150	OC
DC Current Gain	hFE	40-300	-	VCE = 1 V, IC = 0.1 mA to 100 mA
Collector Emitter Cutoff Current	ICES	-50	nA	VCE = 30 V
Emitter Base Cutoff Current	IEBO	-50	nA	VEB = 3 V
Collector Base Breakdown Voltage	V(BR)CBO	60	V	IC = 10 A
Collector Emitter Breakdown Voltage	V(BR)CEO	40	V	IC = 1 mA
Emitter Base Breakdown Voltage	V(BR)EBO	6	V	IE = 10 A
Collector Emitter Saturation Voltage	VCE(sat)	0.2-0.3	V	IC = 10 mA, IB = 1 mA / IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage	VBE(sat)	0.65-0.95	V	IC = 10 mA, IB = 1 mA / IC = 50 mA, IB = 5 mA
Transition Frequency	fT	300	MHz	VCE = 20 V, -IE = 10 mA, f = 100 MHz
Collector Output Capacitance	Cob	-4	pF	VCB = 10 V, f = 100 KHz
Delay Time	td	-35	ns	VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
Rise Time	tr	-35	ns	VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
Storage Time	tstg	-200	ns	VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA
Fall Time	tf	-50	ns	VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA