electronic diode FUXINSEMI MURA160T3G-FS with 1 amp forward current and 600 volts maximum reverse voltage
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Product Description
Product Overview
The MURA160T3G-FS is a high-performance diode designed for various electronic applications. It features a maximum continuous reverse voltage of 600V and a maximum repetitive peak reverse voltage of 600V, making it suitable for power rectification and voltage clamping circuits. With a maximum average forward rectified current of 1.0A and a low forward voltage drop, it ensures efficient operation. The device is compliant with Halogen-free standards and offers a wide operating junction temperature range from -65C to 175C.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Halogen-free compliant
Technical Specifications
| Parameter | Symbol | Units | Value (TA = 25C unless otherwise noted) |
|---|---|---|---|
| Maximum average forward rectified current | IO | A | 1.0 |
| Maximum instantaneous forward voltage at IF = 1.0A | VF | V | 1.05 |
| Maximum reverse leakage current at rated VR | IR | A | 50 |
| Maximum continuous reverse voltage | VR | V | 600 |
| Maximum repetitive peak reverse voltage | VRRM | V | 600 |
| Maximum RMS voltage | VRMS | V | 420 |
| Non-repetitive peak forward surge current 8.3ms single half sine-wave | IFSM | A | 15 |
| Typical junction capacitance (Note 1) | CJ | pF | 15 |
| Typical thermal resistance junction to ambient (Note 3) | RJA | C / W | 55 to 175 |
| Typical thermal resistance junction to case (Note 3) | RJC | C / W | 1.25 |
| Operating junction temperature range | TJ | C | -65 to 175 |
| Storage temperature range | TSTG | C | -65 to 175 |
| Maximum reverse recovery time (Note 2) | trr | ns | 50 |
| Maximum instantaneous forward voltage at IF = 1.0A | VF | V | 1.25 |
Notes:
- Measured at 1 MHz and applied reverse voltage of 4.0 VDC
- Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A
- Mounted on FR-4 PCB Copper, minimum recommended pad layout
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