Dual transistor npn and pnp plastic encapsulated package GOODWORK BC847BPN for general electronic applications

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Product Description

Product Overview

The BC847BPN is a plastic-encapsulated transistor featuring epitaxial die construction with two isolated NPN/PNP transistors in a single package. It is designed for general-purpose applications.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic-Encapsulate
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	TR1 (NPN) Test Conditions	Min	Typ	Max	Unit	TR2 (PNP) Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				50	V				-50	V
Collector-Emitter Voltage	VCEO				45	V				-45	V
Emitter-Base Voltage	VEBO				6	V				-5	V
Collector Current Continuous	IC				0.1	A				-0.1	A
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			200	mW	(Ta=25 unless otherwise noted)			200	mW
Junction Temperature	TJ				150					150
Storage Temperature	Tstg		-55		150			-55		150
Collector-base breakdown voltage	V(BR)CBO	IC=10A,IE=0	50			V	IC=-10A,IE=0	-50			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=10mA,IB=0	45			V	IC=-10mA,IB=0	-45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=1A,IC=0	6			V	IE=-1A,IC=0	-5			V
Collector cut-off current	ICBO	VCB=30V,IE=0			15	nA	VCB=-30V,IE=0			-15	nA
Emitter cut-off current	IEBO	VEB=5V,IC=0			15	nA	VEB=-5V,IC=0			-15	nA
DC current gain	hFE	VCE=5V,IC=2mA	200		475		VCE=-5V,IC=-2mA	200		475
Collector-emitter saturation voltage	VCE(sat)	IC=10mA,IB=0.5mA		0.25		V	IC=-10mA,IB=-0.5mA		-0.3		V
Collector-emitter saturation voltage	VCE(sat)	IC=100mA,IB=5mA		0.6		V	IC=-100mA,IB=-5mA		-0.65		V
Base-emitter saturation voltage	VBE(sat)	IC=10mA,IB=0.5mA		0.7		V	IC=-10mA,IB=-0.5mA		-0.7		V
Base-emitter saturation voltage	VBE(sat)	IC=100mA,IB=5mA		0.9		V	IC=-100mA,IB=-5mA		-0.95		V
Base-emitter voltage	VBE(on)	VCE=5V,IC=2mA		0.58	0.7	V	VCE=-5V,IC=-2mA		-0.6	-0.75	V
Base-emitter voltage	VBE(on)	VCE=5V,IC=10mA		0.72		V	VCE=-5V,IC=-10mA		-0.82		V
Collector output capacitance	Cob	VCB=10V,IE=0,f=1MHz			4.5	pF	VCB=-10V,IE=0,f=1MHz			4.5	pF
Transition frequency	fT	VCE=5V,IC=10mA,f=100MHz			100	MHz	VCE=-5V,IC=-10mA,f=100MHz			100	MHz
Noise figure	NF	VCE=5V,Ic=0.2mA, f=1kHz,Rg=2K,f=200Hz			10	dB	VCE=-5V,Ic=-0.2mA, f=1kHz,Rg=2K,f=200Hz			10	dB