Electronic transistor GOODWORK 2N5551 NPN type designed for medium power amplification and switching

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Product Description

Product Overview

The 2N5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401, offering reliable performance for various electronic circuits.

Product Attributes

Marking Type Number: 2N5551
Marking Code: G1
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS
CollectorBase Voltage	VCBO				180	V
CollectorEmitter Voltage	VCEO				160	V
EmitterBase Voltage	VEBO				6	V
Collector Current Continuous	IC				600	mA
Collector Power Dissipation	PC				300	mW
Thermal Resistance From Junction To Ambient	RthJA			416	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55~+150
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltage	V(BR)CBO	IC = 100uA, IE = 0	180			V
Collector-emitter breakdown voltage	V(BR)CEO	IC = 1 mA, IB = 0	160			V
Emitter-base breakdown voltage	V(BR)EBO	IE = 10uA, IC = 0	6			V
Collector cut-off current	ICBO	VCB = 120V, IE = 0			1	nA
Emitter cut-off current	IEBO	VEB = 4V, IC =0			1	nA
DC current gain	hFE1	VCE = 5V, IC =10mA	100		300
DC current gain	hFE2	IC = 50mA, IB = 5mA		100	300
DC current gain	hFE3	VCE = 5V, IC = 50mA		300
Collector-emitter saturation voltage	VCE(sat)1	IC = 10mA, IB = 1mA		0.15		V
Collector-emitter saturation voltage	VCE(sat)2	IC = 50mA, IB = 5mA		0.2		V
Base-emitter saturation voltage	VBE(sat)1	IC = 10mA, IB = 1mA		0.6		V
Base-emitter saturation voltage	VBE(sat)2	IC = 50mA, IB = 5mA		0.8		V
Collector output capacitance	Cob	VCB = 10V, IE = 0, f=1MHz		1		pF
Transition frequency	fT	VCE = 10V, IC = 10mA, f=100MHz		50		MHz