NPN Transistor GOODWORK SS8050-Y1 Featuring 40V Collector Base Voltage and Wide Storage Temperature Range

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Product Description

S 8050 NPN Transistor

The S 8050 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is a complementary device to the SS8550.

Product Attributes

Marking Type number: SS8050
Marking code: Y1

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
CollectorBase Voltage	VCBO				40	V
CollectorEmitter Voltage	VCEO				25	V
EmitterBase Voltage	VEBO				5	V
Collector Current Continuous	IC				1.5	A
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			300	mW
Thermal Resistance From Junction To Ambient	RthJA				417	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC = 100uA, IE = 0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC = 0.1 mA, IB = 0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE = 100uA, IC = 0	5			V
Collector cut-off current	ICBO	VCB = 40V, IE = 0			100	nA
Emitter cut-off current	IEBO	VEB = 5V, IC =0			0.1	uA
DC current gain	hFE1	VCE = 1V, IC = 100mA	120
DC current gain	hFE2	IC = 800mA, IB = 80mA	400
Collector-emitter saturation voltage	VCE(sat)	IC = 800mA, IB = 80mA		0.5	1.2	V
Base-emitter saturation voltage	VBE(sat)	VCE = 1V, IC = 800mA			1.2	V
Transition frequency	fT	VCE = 10V, IC = 50mA, f=30MHz		100		MHz
Collector cut-off current	ICEO	VCE = 20V, IE=0			0.1	uA