Power Semiconductor Device FUXINSEMI C2M1000170D Silicon Carbide N Channel Enhancement Mode MOSFET
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The C2M1000170D is a Silicon Carbide Power MOSFET featuring N-Channel Enhancement Mode. It is designed for high-performance power applications.
Product Attributes
- Brand: Fuxin Semiconductor
- Material: Silicon Carbide
Technical Specifications
| Parameter | Conditions | Value |
| Drain-Source Current, IDS (A) | VDS = 20 V, tp | 0 to 16 |
| Drain-Source Current, IDS (A) | VDS = 20 V, tp | 0 to 16 |
| Drain-Source Current, IDS (A) | VDS = 20 V, tp | 0 to 16 |
| Threshold Voltage, Vth (V) | VGS = VDS, IDS = 0.5 mA | -5 to 5 |
| Gate Charge, QG (nC) | IDS = IGS = 50 mA, VDS = 2 A, TJ = 25 C | 0 to 25 |
| Drain-Source Current, IDS (A) | Tj = -55 C, tp | 0 to 16 |
| Drain-Source Current, IDS (A) | Tj = 25 C, tp | 0 to 16 |
| Drain-Source Current, IDS (A) | Tj = 150 C, tp | 0 to 16 |
| Stored Energy, EOSS (J) | VDS = 1200 V | 0 to 1000 |
| Capacitance (pF) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | Ciss, Coss, Crss (0 to 1000) |
| Capacitance (pF) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | Ciss, Coss, Crss (0 to 100) |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina