Electronic Amplification and Switching Solutions with Goodwork SS8050W NPN Transistor Technology

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Product Description

Product Overview

The SS8050W is an NPN transistor, complementary to the SS8550W. It is designed for various electronic applications requiring amplification and switching capabilities.

Product Attributes

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Technical Specifications

Symbol	Parameter	Test conditions	MIN	TYP	MAX	Units
V(BR)CBO	Collector-base breakdown voltage	IC= 100A, IE=0			40	V
V(BR)CEO	Collector-emitter breakdown voltage	IC= 0.1mA, IB=0			25	V
V(BR)EBO	Emitter-base breakdown voltage	IE=100A, IC=0			5	V
ICBO	Collector cut-off current	VCB=40V, IE=0			0.1	A
ICEO	Collector cut-off current	VCB=20V, IE=0			0.1	A
IEBO	Emitter cut-off current	VEB= 5V, IC=0			0.1	A
hFE(1)	DC current gain	VCE=1V, IC= 100mA	120		400
hFE(2)	DC current gain	VCE=1V, IC= 800mA	40
VCE(sat)	Collector-emitter saturation voltage	IC=800mA, IB= 80mA			0.5	V
VBE(sat)	Base-emitter saturation voltage	IC=800mA, IB= 80mA			1.2	V
fT	Transition frequency	VCE=10V, IC= 50mA f=30MHz		100		MHz
VCBO	Collector-Base Voltage				40	V
VCEO	Collector-Emitter Voltage				25	V
VEBO	Emitter-Base Voltage				5	V
IC	Collector Current -Continuous				1.5	A
PC	Collector Power Dissipation				0.2	W
Tj	Junction Temperature				150
Tstg	Storage Temperature		-55		150