Electronic Component GOODWORK PMBT2222A GK NPN Transistor with Complementary PNP MMBT2907A Included

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Product Description

Product Overview

The PMBT2222A is an NPN epitaxial planar die construction transistor. It features a complementary PNP type available (MMBT2907A). This transistor is suitable for various applications requiring NPN transistor functionality.

Product Attributes

Marking Type number: PMBT2222A
Marking code: 1P
Complementary PNP Type: MMBT2907A

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
CollectorBase Voltage	VCBO	IC = 10uA, IE = 0	75			V
CollectorEmitter Voltage	VCEO	IC = 10 mA, IB = 0	40			V
EmitterBase Voltage	VEBO	IE = 10uA, IC = 0	6			V
Collector Current Continuous	IC				600	mA
Collector Power Dissipation	PC				300	mW
Thermal Resistance From Junction To Ambient	RthJA			417		/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Collector cut-off current	ICEX	VCB = 60V, IE = 0		0.01		uA
Emitter cut-off current	IEBO	VEB = 3V, IC =0		0.01		uA
DC current gain	hFE1	VCE = 30V, VBE(off) =3V	100
Collector-emitter saturation voltage	VCE(sat)	IC = 500mA, IB = 50mA		0.25	1.2	V
Base-emitter saturation voltage	VBE(sat)	IC = 500mA, IB = 50mA		0.9	1.2	V
Transition frequency	fT	VCE = 20V, IC = 20mA, f=100MHz		150		MHZ
Delay time	td	VCC = 30V, IC = 150mA Ib1=15mA		25		ns
Rise time	tr	VCC = 30V, IC = 150mA Ib1=15mA		35		ns
Storage time	ts	IC = 150mA, IB1=15mA, IB2= -40mA		225		ns
Fall time	tf	IC = 150mA, IB1=15mA, IB2= -40mA		60		ns
Collector-emitter breakdown voltage	V(BR)CEO	IC = 10 mA, IB = 0	40			V
Emitter-base breakdown voltage	V(BR)EBO	IE = 10uA, IC = 0	6			V
Collector cut-off current	ICBO	VCB = 60V, IE = 0		0.01		uA
DC current gain	hFE2	VCE = 10V, IC = 150mA	300
DC current gain	hFE3	VCE = 10V, IC = 500mA			300