High voltage NPN transistor GOODWORK 2SC1623 designed for amplification and switching in electronics
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Negotiable
MOQ:
Negotiable
Delivery Time:
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Product Description
Product Overview
The 2SC1623 is an NPN transistor designed for high DC current gain and high voltage applications. It features hFE of 200(Typ) and VCEO of 50V, making it suitable for various electronic circuits requiring amplification and switching capabilities.
Product Attributes
- Marking Type number: 2SC1623
- Marking code: L4/L5/L6/L7
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| V(BR)CBO | Collector-emitter breakdown voltage | IC = 100uA, IE = 0 | 60 | V | ||
| V(BR)CEO | Collector-base breakdown voltage | IC = 1 mA, IB = 0 | 50 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE = 100uA, IC = 0 | 5 | V | ||
| ICBO | Collector cut-off current | VCB = 60V, IE = 0 | 0.1 | uA | ||
| IEBO | Emitter cut-off current | VEB = 5V, IC = 0 | 0.1 | uA | ||
| hFE | DC current gain | VCE = 6V, IC = 1mA | 200 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC = 100mA, IB = 10mA | 0.3 | 1 | V | |
| VBE(sat) | Base-emitter saturation voltage | IC = 100mA, IB =10mA | 0.6 | 1.2 | V | |
| fT | Transition frequency | VCE = 6V, IC = 10mA | 200 | MHZ | ||
| PC | Collector Power Dissipation | (Ta=25 unless otherwise noted) | 200 | mW | ||
| RthJA | Thermal Resistance From Junction To Ambient | 625 | /W | |||
| TJ,Tstg | Operation Junction andStorage Temperature Range | -55 | +150 |
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