SCRs series featuring FUXINSEMI MCR100-8G with 0.8A sensitive gate and high shock loading capability

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Product Description

Product Overview

The MCR100-8G is a series of 0.8A sensitive gate SCRs designed for applications requiring high shock loading capability and strong resistance to electromagnetic interference. These SCRs offer a high dv/dt rate and are suitable for various power control applications.

Product Attributes

Brand: FS
Origin: www.fuxinsemi.com
Package: TO-92

Technical Specifications

Symbol	Parameter	Value	Unit	Test Condition
IT(RMS)	RMS on-state current	0.8	A
VDRM / VRRM	Repetitive peak off-state/reverse voltage	600 / 800	V
IGT	Gate trigger current	10~200	A	VD =12V, IT=10mA, Tj =25
VGT	Gate trigger voltage	-	0.8	V
VGD	Gate non-trigger voltage	0.2	-	V	VD =1/2VDRM, Tj =110
IL	Latching current	-	3	mA	VD =12V, IG=0.5mA, RGK=1k, Tj =25
IH	Holding current	-	4	mA
dVD/dt	Critical-rate of rise of commutation voltage	10	-	V/s	VD=2/3VDRM, Gate Open, Tj =110
VTM	Forward "on" voltage	-	1.5	V	ITM =1.2A, tp=380s
IDRM	Repetitive Peak Off-State Current	-	5	A	VD =VDRM, Tj=25
IRRM	Repetitive Peak Reverse Current	-	0.1	mA	VR =VRRM, Tj=110
ITSM	Non repetitive surge peak on-state current (full cycle, F=50Hz)	8	A
I2t	I2t value for fusing (tp=10ms)	0.32	A2s
dIT/dt	Critical rate of rise of on-state current (IG =2IGT)	50	A/s
IGM	Peak gate current	0.2	A
PG(AV)	Average gate power dissipation	0.1	W
TJ	Junction Temperature	-40 ~ +110
TSTG	Storage Temperature	-40 ~ +150
Rth(j-c)	Junction to case Thermal resistance	60	/W	TYP.
Rth(j-a)	Junction to ambient Thermal resistance	150	/W	TYP.