GL GLN4013AS 8 N Channel MOSFET Offering Fast Switching and Low Reverse Transfer Capacitance in SOP 8
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Product Description
Product Overview
The GLN4013AS-8 is an N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including PWM applications, load switching, and power management. This component features fast switching, low gate charge and Rdson, low reverse transfer capacitances, and is 100% tested for single pulse avalanche energy. The device is packaged in a RoHS-compliant SOP-8 form factor.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
- Channel Type: N-Channel
- Technology: Advanced Trench
- Package: SOP-8
- Compliance: RoHS standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units | ||
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25 unless otherwise specified) | ||||||
| VDSS | Drain-to-Source Voltage | 40 | V | |||
| ID | Continuous Drain Current | 10 | A | |||
| ID @ TC = 70 C | Continuous Drain Current | 7 | A | |||
| IDMa1 | Pulsed Drain Current | 40 | A | |||
| VGS | Gate-to-Source Voltage | 20 | V | |||
| EASA2 | Single Pulse Avalanche Energy | 80 | mJ | |||
| dv/dta3 | Peak Diode Recovery dv/dt | 5.0 | V/ns | |||
| PD | Power Dissipation | 3.1 | W | |||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||||
| TL | Maximum Temperature for Soldering | 300 | ||||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||||
| OFF Characteristics | ||||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=-250A | 40 | V | ||
| BVDSS/TJ | BVdss Temperature Coefficient | ID=250uA,Reference25 | -- | 0.1 | V/ | |
| IDSS | Drain to Source Leakage Current | VDS=40,VGS=0V,Ta=25 | -- | 1 | A | |
| IDSS | Drain to Source Leakage Current | VDS=40V,VGS=0V,Ta=125 | -- | 250 | A | |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | 1 | A | |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -1 | A | |
| ON Characteristics | ||||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=10A | -- | 11 | 13 | m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1.0 | 1.5 | 2.5 | V |
| Dynamic Characteristics | ||||||
| gfs | Forward Transconductance | VDS=5V,ID=8A | 33 | -- | -- | S |
| Ciss | Input Capacitance | VGS=0V,VDS=20V f=1.0MHz | -- | 750 | -- | pF |
| Coss | Output Capacitance | -- | 150 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 80 | -- | pF | |
| Resistive Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ID=2A,VDD=20V VGS=10V,RG=3,RL=1 | -- | 6 | -- | ns |
| tr | Rise Time | -- | 17 | -- | ns | |
| td(OFF) | Turn-Off Delay Time | -- | 29 | -- | ns | |
| tf | Fall Time | -- | 17 | -- | ns | |
| Qg | Total Gate Charge | ID=10A,VDD=20V VGS=10V | -- | 15 | -- | nC |
| Qgs | Gate to Source Charge | -- | 3 | -- | nC | |
| Qgd | Gate to Drain (Miller)Charge | -- | 2.5 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) | -- | 10 | A | ||
| ISM | Maximum Pulsed Current (Body Diode) | -- | 40 | A | ||
| VSD | Diode Forward Voltage | IS=10A,VGS=0V | -- | 1.2 | V | |
| trr | Reverse Recovery Time | IS=10A,Tj = 25C dIF/dt=100A/us,VGS=0V | -- | 40 | -- | ns |
| Qrr | Reverse Recovery Charge | Pulse width tp380s,2% | -- | 21 | -- | nC |
| RJA | Junction-to-Ambient | 30 | /W | |||
Notes:
- a1: Repetitive rating; pulse width limited by maximum junction temperature.
- a3: ISD =10A,di/dt 100A/us,VDDBVDS, Start TJ=25.
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