High voltage high current Darlington array GN Semic GN2003B compatible with TTL CMOS and PMOS logic circuits
Product Description
The GN2003B is a high-voltage, high-current Darlington array composed of seven NPN Darlington pairs. All units share a common emitter, and each unit features an open-collector output. Each Darlington pair includes a 2.7 K base resistor, making it directly compatible with TTL and 5V CMOS circuits, allowing it to directly process data that previously required standard logic buffers. The GN2003B operates at high voltages and currents, with a sink current capability of up to 500mA. It can withstand 50V in the off-state, and its outputs can operate in parallel under high load currents, offering an excellent solution for driving circuits with multiple interfaces. Key features include a wide operating voltage range, seven high-gain Darlington arrays, high output voltage (up to 50V), large output current (up to 500mA), direct compatibility with TTL, CMOS, and PMOS, and built-in clamp diodes for inductive loads.
Application Areas
- Relay driver
- Incandescent lighting driver
- Stepper motor driver
- Solenoid driver
- DC brushless motor driver
Product Attributes
- Brand: GN Semiconductor
- Origin: China
- Package: SOP-16
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Input Voltage | VIN | -0.5 | 30 | V | ||
| Output Voltage | VOUT | -0.5 | 50 | V | ||
| Clamp Diode Reverse Voltage | VR | 50 | V | |||
| Continuous Collector Current | IOUT | 500 | mA | |||
| Clamp Diode Forward Current | IF | 500 | mA | |||
| Storage Temperature | TSTG | -55 | 150 | C | ||
| Operating Temperature | TOPR | -40 | 85 | C | ||
| Junction Temperature | TJ | -40 | 150 | C | ||
| Electrical Characteristics (Unless otherwise specified, Ta=25C) | ||||||
| Output Leakage Current | ICEX | TA=25C, VCE=50V (Fig. 1) | 20 | uA | ||
| TA=85C, VCE=50V (Fig. 1) | 100 | uA | ||||
| CE Saturation Voltage | VCE(sat) | IOUT=350mA, IIN=500 uA (Fig. 3) | 1.3 | 1.6 | V | |
| IOUT=250mA, IIN=350 uA (Fig. 3) | 1.1 | 1.3 | V | |||
| IOUT=100mA, IIN=250 uA (Fig. 3) | 0.9 | 1.1 | V | |||
| ON State Input Current | II(ON) | VI=3.85V (Fig. 4) | 1.2 | 1.35 | mA | |
| OFF State Input Current | II(OFF) | IC=500uA (Fig. 5) | 50 | 100 | uA | |
| TA=+25C | 50 | 100 | uA | |||
| TA=+85C | 25 | 50 | uA | |||
| ON State Input Voltage | VI(ON) | VCE=2.0V, IC=200mA (Fig. 6) | 2.4 | V | ||
| VCE=2.0V, IC=250mA (Fig. 6) | 2.7 | V | ||||
| VCE=2.0V, IC=300mA (Fig. 6) | 3.0 | V | ||||
| Input Capacitance | CI | 15 | 30 | pF | ||
| Turn-on Delay Time | tMH | 0.5VI to 0.5 V0 | 1.0 | uS | ||
| Turn-off Delay Time | tML | 0.5VI to 0.5 V0 | 1.0 | uS | ||
| Clamp Diode Leakage Current | IR | VR=50V (Fig. 7) | uA | |||
| TA=+25C | 5 | 10 | uA | |||
| TA=+85C | 10 | 50 | uA | |||
| Clamp Diode Forward Voltage | VF | IF=350mA (Fig. 8) | 1.7 | 2.0 | V | |
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