NPN Silicon Power Transistor GOODWORK D882 Featuring High hFE Linearity for Electronic Circuits

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The D882 is an NPN Silicon Power Transistor designed for power applications. It features excellent hFE linearity and high hFE values, making it suitable for various electronic circuits. The transistor comes in a SOT-89 package for easy integration.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Silicon
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Current Gain Group	Min.	Typ.	Max.	Unit
DC Current Gain	hFE	R	30	-	120	-
DC Current Gain	hFE	Q	60	-	200	-
DC Current Gain	hFE	P	100	-	320	-
DC Current Gain	hFE	E	160	-	400	-
Collector Base Cutoff Current	ICBO	-	-	-	1	µA
Emitter Base Cutoff Current	IEBO	-	-	-	1	µA
Collector Emitter Saturation Voltage	VCE(sat)	-	-	-	0.5	V
Base Emitter Saturation Voltage	VBE(sat)	-	-	-	2	V
Gain Bandwidth Product	fT	-	-	90	-	MHz
Output Capacitance	Cob	-	-	45	-	pF

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Collector to Base Voltage	VCBO	40	V
Collector to Emitter Voltage	VCEO	30	V
Emitter to Base Voltage	VEBO	5	V
Collector Current	IC	3	A
Peak Collector Current (t = 10 ms)	ICP	7	A
Total power dissipation (Ta = 25 OC)	Ptot	1	W
Total power dissipation (Tc = 25 OC)	Ptot	10	W
Junction Temperature	Tj	150	OC
Storage Temperature Range	Tstg	-55 to +150	OC

Package Outline Dimensions (SOT-89)

Symbol	Dimensions (mm) MIN	Dimensions (mm) NOM	Dimensions (mm) MAX
A	1.40	-	1.60
b	0.44	-	0.56
b1	0.36	-	0.48
C	0.3	-	0.5
D	4.40	-	4.60
D1	1.50	-	1.75
E	2.29	-	2.60
E1	2.00†	-	2.29
e	1.50 BSC	-	-
e1	3.00 BSC	-	-
H	3.94	-	4.25
L	0.89	-	1.20