Dual Transistor Complementary Pair Featuring GOODWORK MMDT3946DW NPN and PNP Types for Amplification

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Product Description

MMDT3946DW DUAL TRANSISTOR (NPN+PNP)

Complementary Pair, One 3904-Type NPN, One 3906-Type PNP. Epitaxial Planar Die Construction. Ideal for Low Power Amplification and Switching.

Parameter	NPN (MMBT3904-Type)	PNP (MMBT3906-Type)	Units
Collector-Base Voltage (V(BR)CBO)	60	-40	V
Collector-Emitter Voltage (V(BR)CEO)	40	-40	V
Emitter-Base Voltage (V(BR)EBO)	5	-5	V
Collector Current - Continuous	0.2	-0.2	A
Collector Power Dissipation	0.2	0.2	W
Junction Temperature	150	150	C
Storage Temperature	-55-150	-55-150	C
Collector Cutoff Current (ICBO) VCB=30V, IE=0	0.05	-0.05	A
Collector Cutoff Current (ICEO) VCE=30V, IB=0	0.5	N/A	A
Emitter Cutoff Current (IEBO) VEB=5V, IC=0	N/A	-0.05	A
DC Current Gain (hFE) VCE=1V, IC=1mA	70	80
DC Current Gain (hFE) VCE=1V, IC=10mA	100	100
DC Current Gain (hFE) VCE=1V, IC=50mA	300	300
DC Current Gain (hFE) VCE=1V, IC=100mA	60	60
Collector-Emitter Saturation Voltage (VCE(sat)1) IC=10mA, IB=1mA	0.2	-0.25	V
Collector-Emitter Saturation Voltage (VCE(sat)2) IC=50mA, IB=5mA	0.3	-0.4	V
Base-Emitter Saturation Voltage (VBE(sat)1) IC=10mA, IB=1mA	0.65 - 0.85	-0.65 - -0.85	V
Base-Emitter Saturation Voltage (VBE(sat)2) IC=50mA, IB=5mA	0.95	-0.95	V
Transition Frequency (fT) VCE=20V,IC=20mA, f=100MHz	300	250	MHz
Noise Figure (NF) VCE=5V,Ic=0.1mA, f=1KHz,Rg=1K	5	4	dB
Output Capacitance (Cob) VCB=5V,IE=0,f=1MHz	4	4.5	pF
Turn-on Delay Time (td) VCC=3V, VBE=0.5V IC=10mA , IB1=- IB2=1mA	35	35	nS
Rise Time (tr) VCC=3V, VBE=0.5V IC=10mA , IB1=- IB2=1mA	35	35	nS
Storage Time (tS) VCC=3V, IC=10mA IB1=- IB2=1mA	200	225	nS
Fall Time (tf) VCC=3V, IC=10mA IB1=- IB2=1mA	50	75	nS