PNP transistor epitaxial planar die GOODWORK MMBT2907A engineered for electronic amplification switching
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Product Description
MMBT2907A PNP TRANSISTOR
The MMBT2907A is an epitaxial planar die construction PNP transistor. It offers a complementary NPN type, the MMBT2222A. This transistor is suitable for various electronic applications requiring PNP amplification and switching capabilities.
Product Attributes
- Marking Type number: MMBT2907A
- Marking code: 2F
- Complementary NPN Type: MMBT2222A
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| CollectorBase Voltage | VCBO | -60 | V | |||
| CollectorEmitter Voltage | VCEO | -60 | V | |||
| EmitterBase Voltage | VEBO | -5 | V | |||
| Collector Current Continuous | IC | -600 | mA | |||
| Total Device Dissipation | PD | (Ta=25) | 250 | mW | ||
| Thermal Resistance From Junction To Ambient | RthJA | 500 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55~+150 | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC =-10uA, IE = 0 | -60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC =-10mA, IB = 0 | -60 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE =-10uA, IC = 0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB =-50V, IE = 0 | -10 | nA | ||
| Base cut-off current | IEBO | VEB =-3V, IC = 0 | -100 | nA | ||
| DC current gain | hFE1 | VC =-20V, IC =-50mA | 300 | |||
| DC current gain | hFE2 | VCE =-30V, IC =-150mA | -50 | |||
| DC current gain | hFE3 | VCE =-30V, IC =-150mA,IB1 15mA | 75 | |||
| DC current gain | hFE4 | IC =-500mA, IB =-50mA | 50 | |||
| DC current gain | hFE5 | IC =-150mA, IB =-15mA | 100 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC =-150mA, IB =-15mA | -1.3 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC =-500mA, IB =-50mA | -1.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | VCE =-10V, IC =-150mA | -0.4 | V | ||
| Base-emitter saturation voltage | VBE(sat) | VCE =-10V, IC =-0.1mA | -0.25 | V | ||
| Transition frequency | fT | VCE =-50mA, IC f=100MHz | 225 | MHZ | ||
| Delay time | td | VCE =-30V, VBE=-0.5V | -2.6 | ns | ||
| Rise time | tr | -50 | ns | |||
| Storage time | ts | -100 | ns | |||
| Fall time | tf | -77 | ns | |||
| hFE RANK RANGE | 100-300 | 200-300 | 100-200 |
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