NPN transistor GOODWORK G1-MMBT5551 designed for performance in amplification and switching circuits

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Product Description

MMBT5551 NPN TRANSISTOR

The MMBT5551 is an NPN transistor, complementary to the MMBT5401, designed for medium power amplification and switching applications. It offers reliable performance for various electronic circuits.

Product Attributes

Marking Type Number: MMBT5551
Marking Code: G1

Technical Specifications

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS
VCBO	CollectorBase Voltage				180	V
VCEO	CollectorEmitter Voltage				160	V
VEBO	EmitterBase Voltage				6	V
IC	Collector Current Continuous				600	mA
PC	Collector Power Dissipation				300	mW
TJ,Tstg	Operation Junction and Storage Temperature Range		-55		+150
RthJA	Thermal Resistance From Junction To Ambient			416		/W
ELECTRICAL CHARACTERISTICS
V(BR)CBO	Collector-base breakdown voltage	IC = 100uA, IE = 0	180			V
V(BR)CEO	Collector-emitter breakdown voltage	IC = 1 mA, IB = 0	160			V
V(BR)EBO	Emitter-base breakdown voltage	IE = 10uA, IC = 0	6			V
ICBO	Collector cut-off current	VCB = 120V, IE = 0			50	nA
IEBO	Emitter cut-off current	VEB = 4V, IC =0			50	nA
hFE1	DC current gain	VCE = 5V, IC =10mA	100
hFE2	DC current gain	VCE = 5V, IC=10mA		300
hFE3	DC current gain	VCE = 5V, IC = 50mA		300
VCE(sat)1	Collector-emitter saturation voltage	IC = 10mA, IB = 1mA		0.15		V
VCE(sat)2	Collector-emitter saturation voltage	IC = 50mA, IB = 5mA		0.2		V
VBE(sat)1	Base-emitter saturation voltage	IC = 10mA, IB = 1mA		0.6		V
VBE(sat)2	Base-emitter saturation voltage	IC = 50mA, IB = 5mA		0.77		V
Cob	Collector output capacitance	VCB = 10V, IE = 0, f=1MHz			10	pF
fT	Transition frequency	VCE = 10V, IC = 10mA, f=100MHz	50			MHz