Comprehensive output characteristics and on resistance versus temperature data for FUXINSEMI C2M0080120D device
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
This document presents the output characteristics, on-resistance, 3rd quadrant characteristics, stored energy, and capacitance versus drain-source voltage for a semiconductor device. The data is presented across various junction temperatures and gate voltages, illustrating the device's performance under different operating conditions.
Product Attributes
- Brand: Fuxinsemi
- Website: www.fuxinsemi.com
- Document Version: Ver2.1
Technical Specifications
| Figure | Description | Conditions | X-Axis | Y-Axis |
| 2 | Output Characteristics | TJ = 25 C, tp = < 200 s | Drain-Source Voltage, VDS (V) | Drain-Source Current, IDS (A) |
| 5 | On-Resistance vs. Drain Current For Various Temperatures | VGS = 20 V, tp < 200 s | Drain-Source Current, IDS (A) | On Resistance, RDS On (mOhms) |
| 1 | Output Characteristics | TJ = -55 C, tp = < 200 s | Drain-Source Voltage, VDS (V) | Drain-Source Current, IDS (A) |
| 3 | Output Characteristics | TJ = 150 C, tp = < 200 s | Drain-Source Voltage, VDS (V) | Drain-Source Current, IDS (A) |
| 4 | Normalized On-Resistance vs. Temperature | IDS = 20 A, VGS = 20 V, tp < 200 s | Junction Temperature, TJ (C) | On Resistance, RDS On (P.U.) |
| 6 | On-Resistance vs. Temperature For Various Gate Voltage | IDS = 20 A, tp < 200 s | Junction Temperature, TJ (C) | On Resistance, RDS On (mOhms) |
| 15 | 3rd Quadrant Characteristic at 150 C | tp < 200 s | Drain-Source Voltage VDS (V) | Drain-Source Current, IDS (A) |
| 13 | 3rd Quadrant Characteristic at -55 C | tp < 200 s | Drain-Source Voltage VDS (V) | Drain-Source Current, IDS (A) |
| 14 | 3rd Quadrant Characteristic at 25 C | tp < 200 s | Drain-Source Voltage VDS (V) | Drain-Source Current, IDS (A) |
| 16 | Output Capacitor Stored Energy | N/A | Drain to Source Voltage, VDS (V) | Stored Energy, EOSS (J) |
| 17 | Capacitances vs. Drain-Source Voltage (0 - 200V) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | Drain-Source Voltage, VDS (V) | Capacitance (pF) |
| 18 | Capacitances vs. Drain-Source Voltage (0 - 1000V) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | Drain-Source Voltage, VDS (V) | Capacitance (pF) |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina