NPN Silicon Epitaxial Planar Transistor GOODWORK BC847BW for General Purpose Switching Applications

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Product Description

Product Overview

NPN Silicon Epitaxial Planar Transistor designed for general purpose and switching applications. This transistor offers reliable performance and is suitable for a wide range of electronic circuits.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Silicon Epitaxial Planar
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	BC846W	BC847W	BC848W	Unit
Absolute Maximum Ratings (Ta = 25 OC)
Collector Base Voltage	VCBO	80	50	30	V
Collector Emitter Voltage	VCEO	65	45	30	V
Emitter Base Voltage	VEBO	6	6	5	V
Collector Current	IC	100			mA
Peak Collector Current	ICM	200			mA
Total Power Dissipation	Ptot	200			mW
Junction Temperature	Tj	150			OC
Storage Temperature Range	Tstg	- 55 to + 150			OC
Characteristics at Ta = 25 OC
DC Current Gain at VCE = 5 V, IC = 2 mA	hFE	110	200	420	-
DC Current Gain at VCE = 5 V, IC = 2 mA	hFE	220	450	800	-
Collector Base Voltage at IC = 10 A	VCBO	80	50	30	V
Collector Emitter Voltage at IC = 10 mA	VCEO	65	45	30	V
Emitter Base Voltage at IE = 1 A	VEBO	6	6	5	V
Collector Base Cutoff Current at VCB = 30 V	ICBO	15			nA
Emitter Base Cutoff Current at VEB = 5 V	IEBO	100			nA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA	VCE(sat)	0.25			V
Collector Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA	VCE(sat)	0.6			V
Base Emitter Voltage at VCE = 5 V, IC = 2 mA	VBE	0.58	-	-	V
Base Emitter Voltage at VCE = 5 V, IC = 10 mA	VBE	-	0.7	0.77	V
Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz	fT	100			MHz
Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz	Cob	4.5			pF