General purpose NPN transistor GOODWORK BC817-25 suitable for amplification and switching applications

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Product Description

Product Overview

The BC817 is an NPN transistor designed for general AF applications. It features a low collector-emitter saturation voltage and has a complementary PNP type, the BC807. This transistor is suitable for various general-purpose amplification tasks.

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Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector- base breakdown voltage	VCBO	Ic= 100 A IE= 0	50			V
Collector- emitter breakdown voltage	VCEO	Ic= 10 mA IB= 0	45			V
Emitter - base breakdown voltage	VEBO	IE= 100A IC= 0			5	V
Collector-base cut-off current	ICBO	VCB= 45 V , IE= 0			0.1	A
Emitter cut-off current	IEBO	VEB=4V , IC=0			0.1	A
Collector-emitter saturation voltage	VCE(sat)	IC=500 mA, IB=50mA			0.7	V
Base - emitter saturation voltage	VBE(sat)	IC= 500 mA, IB= 50mA			1.2	V
Base - emitter voltage	VBE	VCE=1V, IC= 500mA		1.2		V
DC current gain	hFE(1)	VCE= 1V, IC= 100mA	100		630
DC current gain	hFE(2)	VCE= 1V, IC= 500mA	40
Collector output capacitance	Cob	VCB= 10V, f=1MHz			10	pF
Transition frequency	fT	VCE= 5V, IC= 10mA,f=100MHz		100		MHz
Collector Power Dissipation	PC	Ta = 25			0.3	W
Junction Temperature	TJ				150
Storage Temperature Range	Tstg		-55		150