Load Switching N Channel MOSFET FUXINSEMI FS2312 with High Density Cell Design and Low On Resistance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The FS2312 is an N-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: Fuxin Semiconductor
- Origin: China (implied by website domain)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | 6.8 | A | |||
| Pulsed Drain Current | IDM | 27 | A | |||
| Power Dissipation | PD | Ta=25 | 1.2 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~ | +150 | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.45 | 1.0 | V | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =6.8A | 18 | mΩ | ||
| VGS =2.5V, ID =3.0A | 22 | |||||
| VGS =1.8V, ID =2.5A | 39 | |||||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 900 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 165 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 75 | pF | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V, ID =6.8A | 9.2 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V, ID =6.8A | 1.7 | nC | ||
| Gate-Drain Charge | Qg | VDS =10V,VGS =4.5V, ID =6.8A | 2.9 | nC | ||
| Turn-on delay time | td(on) | VDD=10V, VGS =4.5V, RGEN=3Ω, RL=1.5Ω | 12 | nS | ||
| Turn-on rise time | tr | VDD=10V, VGS =4.5V, RGEN=3Ω, RL=1.5Ω | 52 | nS | ||
| Turn-off delay time | td(off) | VDD=10V, VGS =4.5V, RGEN=3Ω, RL=1.5Ω | 17 | nS | ||
| Turn-off fall time | tf | VDD=10V, VGS =4.5V, RGEN=3Ω, RL=1.5Ω | 10 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Current | IS | 6.8 | A | |||
| Diode Forward voltage | VSD | VGS =0V, IS=6.8A | 1.2 | V | ||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina