Transistor GOODWORK 2SC3356 NPN Type for Microwave Low Noise Amplifier Applications in VHF UHF Bands

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Product Description

Product Overview

The 2SC3356 is an NPN Silicon Epitaxial Planar Transistor designed for microwave low noise amplifier applications in the VHF, UHF, and CATV bands. It is subdivided into three groups (Q, R, S) based on its DC current gain, offering flexibility for various design requirements.

Product Attributes

Brand: DEMACHEL
Material: Silicon Epitaxial Planar
Package: SOT-23

Technical Specifications

Parameter	Symbol	Group Q	Group R	Group S	Unit	Notes
DC Current Gain	hFE	50 - 100	80 - 160	125 - 250	-	at VCE = 10 V, IC = 20 mA
Collector Cutoff Current	ICBO	-	-	1	A	at VCB = 10 V
Emitter Cutoff Current	IEBO	-	-	1	A	at VEB = 1 V
Gain Bandwidth Product	fT	-	7	-	GHz	at VCE = 10 V, IC = 20 mA
Feed-Back Capacitance	Cre	-	-	0.55	pF	at VCB = 10 V, f = 1 MHz
Noise Figure	NF	-	1.1	2	dB	at VCE = 10 V, IC = 7 mA, f = 1 GHz

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Collector Base Voltage	VCBO	20	V
Collector Emitter Voltage	VCEO	12	V
Emitter Base Voltage	VEBO	3	V
Collector Current	IC	100	mA
Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	OC
Storage Temperature Range	TS	-65 to +150	OC

Mechanical Data (SOT-23)

Parameter	Symbol	Min.	Max.	Unit
Dimension A	A	1.1	-	mm
Dimension C	C	-	1.4	mm
Dimension D	D	2.6	3.0	mm
Dimension E	E	0.5	0.55	mm
Dimension HE	HE	0.36	-	mm
Dimension e	e	0.0	0.9	mm
Dimension M	M	0.08	-	mm
Dimension L	L	1.2	2.8	mm
Dimension L1	L1	0.3	-	mm
Dimension a	a	43	77	(ref)
Dimension b	b	6	-	(ref)
Dimension c	c	55	118	(ref)
Dimension d	d	102	20	(ref)
Dimension e	e	35	3	(ref)
Dimension f	f	47	12	(ref)
Dimension g	g	110	14	(ref)
Dimension h	h	87	6	(ref)
Dimension i	i	-	22	(ref)