Medium Power Amplification and Switching Transistor GOODWORK MMST5551 NPN Plastic Encapsulated Device

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The MMST5551 is an NPN Silicon Plastic-Encapsulated Transistor ideal for medium power amplification and switching applications. It is also available in a lead-free version and is complementary to the MMBT5401W. The device is marked with 'K4N'.

Product Attributes

Type: NPN Silicon Plastic-Encapsulated Transistor
Complementary to: MMBT5401W
Marking: K4N
Available in Lead Free Version: Yes

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Condition
Collector to Base Voltage	VCBO	180	V
Collector to Emitter Voltage	VCEO	160	V
Emitter to Base Voltage	VEBO	6	V
Collector Current-Continuous	IC	200	mA
Collector Power Dissipation	PC	200	mW	TA = 25C
Thermal Resistance, Junction to Ambient	RJA	625	C/W
Operating & Storage Temperature	TJ, TSTG	150, -55 ~ 150	C
Collector-Base Breakdown Voltage	V(BR)CBO	180	V	IC=100A, IE=0
Collector-Emitter Breakdown Voltage	V(BR)CEO	160	V	IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage	V(BR)EBO	6	V	IE=10A, IC=0
Collector Cutoff Current	ICBO	50	nA	VCB=120V, IE=0
Emitter Cutoff Current	IEBO	50	nA	VEB=4V, IC=0
DC Current Gain	hFE1	80		VCE=5V, IC=1mA
	hFE2	80-250		VCE=5V, IC=10mA
	hFE3	30		VCE=5V, IC=50mA
Collector-Emitter Saturation Voltage	VCE(sat)	0.15	V	IC=10mA, IB=1mA
Collector-Emitter Saturation Voltage	VCE(sat)	0.2	V	IC=50mA, IB=5mA
Base-Emitter Voltage	VBE(sat)	1	V	IC=10mA, IB=1mA
Base-Emitter Voltage	VBE(sat)	1	V	IC=50mA, IB=5mA
Transition Frequency	fT	100-300	MHz	VCE=10V, IC=10mA, f=100MHz
Collector Output Capacitance	Cob	6	pF	VCB=10V, IE=0, f=1MHz
Noise Figure	NF	8	dB	VCE=5V, IC=0.2mA, f=1KHz, RS=1K