Switching and AF Amplifier PNP Transistor GOODWORK FMMT593 with Controlled Saturation Characteristics

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The FMMT593 is a PNP Transistor designed for Switching and AF Amplifier Applications. It offers robust performance with key parameters like high breakdown voltages and controlled saturation characteristics.

Product Attributes

Brand: DEMAC HELL
Package: SOT-23

Technical Specifications

Parameter	Symbol	Min.	Max.	Unit
Collector Base Voltage	-VCBO		120	V
Collector Emitter Voltage	-VCEO		100	V
Emitter Base Voltage	-VEBO		5	V
Collector Current	-IC		1	A
Maximum Power Dissipation	PD		250	mW
Junction Temperature	TJ		150
Storage Temperature Range	TSTG	-55	+150
DC Current Gain at VCE = -5 V, IC = -1 mA	HFE	100	300
DC Current Gain at VCE = -5 V, IC = -250 mA	HFE	100	--
DC Current Gain at VCE = -5 V, IC = -0.5 A	HFE	100	--
DC Current Gain at VCE = -5 V, IC = -1 A	HFE	50	--
Collector Base Cutoff Current at VCB = -100V	-ICBO	--	0.1	A
Collector Emitter Cutoff Current at VCES = -100V	-ICES	--	0.1	A
Emitter Base Cutoff Current at VEB = -4 V	-IEBO	--	0.1	A
Collector Base Breakdown Voltage at IC = -100 A	-V(BR)CBO	120	--	V
Collector Emitter Breakdown Voltage at IC = -1 mA	-V(BR)CEO	100	--	V
Emitter Base Breakdown Voltage at IE = -100 A	-V(BR)EBO	5	--	V
Collector Emitter Saturation Voltage at IC = -250 mA, IB = -25 mA	-VCE(sat)	--	0.2	V
Collector Emitter Saturation Voltage at IC = -500 mA, IB = -50 mA	-VCE(sat)	--	0.3	V
Base Emitter Saturation Voltage at IC = -500 mA, IB = -50 mA	-VBE(sat)	--	1.1	V
Base Emitter On Voltage at VCE = -5 V, IC = -1m A	-VBE(on)	--	1	V
Transition Frequency at VCE = -10 V, IC = -50 mA, f = 100 MHz	FT	150	--	MHz
Collector Output Capacitance at VCB = -10 V, f = 1 MHz	Cob	--	5	pF