NPN Silicon Transistor GOODWORK FMMT491 with Improved Breakdown Voltage and Low Saturation Voltage

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Product Description

Product Overview

The FMMT491 is an NPN Silicon Epitaxial Planar Transistor designed with improved VCE(sat) and reverse blocking specifications. It is suitable for various electronic applications requiring high performance and reliability.

Product Attributes

Brand: DEMACHEL
Marking: 491
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector- base breakdown voltage	VCBO	Ic= 100 A IE= 0			80	V
Collector- emitter breakdown voltage	VCEO	Ic= 10 mA IB= 0			60	V
Emitter - base breakdown voltage	VEBO	IE= 100A IC=0			7	V
Collector-base cut-off current	ICBO	VCB= 60 V , IE= 0			100	nA
Collector- emitter cut-off current	ICES	VCE= 60 V , IE= 0			100	nA
Emitter cut-off current	IEBO	VEB= 5.6V , IC=0			100	nA
Collector-emitter saturation voltage	VCE(sat)	IC=500 mA, IB=50mA (Note.1)			150	mV
Collector-emitter saturation voltage	VCE(sat)	IC= 1 A, IB=100mA (Note.1)			250	mV
Base - emitter saturation voltage	VBE(sat)	IC= 1 A, IB= 100mA (Note.1)		1.1		V
Base - emitter saturation voltage	VBE(sat)	VCE= 5V, IC= 1 A (Note.1)			1.1	V
Base-emitter turn-on voltage	VBE(on)	VCE= 5V, IC= 1 A (Note.1)				V
DC current gain	hFE(1)	VCE= 5V, IC=1mA	100
	hFE(2)	VCE= 5V, IC= 500mA	100		300
	hFE(3)	VCE= 5V, IC= 1 A	80
	hFE(4)	VCE= 5V, IC= 2 A	30
Collector output capacitance	Cob	VCB= 10V, f=1MHz			10	pF
Transition frequency	fT	VCE= 10V,Ic=50mA, f=100MHz	150			MHz