High voltage switching transistor GOODWORK 13009 suitable for electronic circuit applications

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Product Description

Product Overview

The 13009 is a high voltage, high speed switching NPN transistor designed for high reliability applications. It offers excellent performance in switching circuits.

Product Attributes

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Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	BVCBO	IC = 1mAIE = 0			700	V
Collector-emitter breakdown voltage	BVCEO	IC = 5mAIB = 0		410	520	V
Emitter-base breakdown voltage	BVEBO	IE =0.1mAIC = 0			9	V
Collector cut-off current	ICBO	VCB = 700VIE = 0			1	mA
Emitter cut-off current	IEBO	VEB = 9VIC = 0			1	mA
DC current gain	hFE(1)	VCE= 5VIC= 3A	10		35
DC current gain	hFE(2)	VCE= 5VIC=2mA	10
Collector-emitter saturation voltage	VCE(sat)	IC = 5AIB = 1A		1.0		V
Collector-emitter saturation voltage	VCE(sat)	IC = 8AIB = 1.6A		1.5		V
Collector-emitter saturation voltage	VCE(sat)	IC = 12AIB = 3A			3	V
Base-emitter on voltage	VBE(sat)	IC = 5AIB = 1A		1.2		V
Base-emitter on voltage	VBE(sat)	IC = 8AIB = 1.6A		1.6		V
Transition frequency	fT	IC= 0.5A, VCE=10V		4		MHz
Output Capacitance	Cob	VCB = 10V,IE = 0 f=0.1MHz			180	pF
Delay Time	td	VC = 125V, IC= 8A, IB1= IB2 = 1.6A tp= 25s, Duty 1%		0.1		s
Rise Time	tr			1		s
Fall Time	tf			0.7		s
Switching Time	ts	IC= 500mA		0.7		s
Thermal Resistance Junction to Ambient	JA				54	/W
Thermal Resistance Junction to Case	JC				4	/W