NPN transistor GOODWORK MMBT3904T in small package offering high collector current and voltage ratings

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Product Description

Product Overview

The MMBT3904T is an NPN transistor designed for general-purpose applications. It offers complementary functionality to the MMBT3906T and comes in a small SOT-523 package, making it suitable for space-constrained designs. This transistor is characterized by its robust maximum ratings and detailed electrical characteristics, including breakdown voltages, current gain, saturation voltages, and switching parameters.

Product Attributes

Complementary to MMBT3906T
Small Package

Technical Specifications

Symbol	Parameter	Value	Unit	Test Conditions
VCBO	Collector-Base Voltage	60	V
VCEO	Collector-Emitter Voltage	40	V
VEBO	Emitter-Base Voltage	6	V
IC	Collector Current	200	mA
PC	Collector Power Dissipation	150	mW	(Ta=25 unless otherwise noted)
RJA	Thermal Resistance From Junction To Ambient	833	/W
Tj	Junction Temperature	150
Tstg	Storage Temperature	-55+150
V(BR)CBO	Collector-base breakdown voltage	60	V	IC=10A, I E=0
V(BR)CEO	Collector-emitter breakdown voltage	40	V	IC=1mA, IB=0
V(BR)EBO	Emitter-base breakdown voltage	6	V	IE=10A, IC=0
ICEX	Collector cut-off current	50	nA	VCE=30V, VEB(off)=3V
IEBO	Emitter cut-off current	100	nA	VEB=5V, IC=0
hFE(1)	DC current gain	70		VCE=1V, IC=1mA
hFE(2)	DC current gain	100	300	VCE=1V, IC=10mA
hFE(3)	DC current gain	60		VCE=1V, IC=50mA
VCE(sat)	Collector-emitter saturation voltage	0.2	V	IC=10mA, IB=1mA
VCE(sat)	Collector-emitter saturation voltage	0.3	V	IC=50mA, IB=5mA
VBE(sat)	Collector-emitter saturation voltage	0.65	0.85	V	IC=10mA, IB=1mA
VBE(sat)	Collector-emitter saturation voltage	0.95	V	IC=50mA, IB=5mA
fT	Transition frequency	300	MHz	VCE=20V,IC=10mA, f=100MHz
Cob	Collector output capacitance	4	pF	VCB=5V, IE=0, f=1MHz
Cib	Base input capacitance	8	pF	VEB=0.5V, IC=0, f=1MHz
td	Delay time	35	ns	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA
tr	Rise time	35	ns	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA
ts	Storage time	200	ns	VCC=3V, IC=10mA, IB1= IB2=1mA
tf	Fall time	50	ns	VCC=3V, IC=10mA, IB1= IB2=1mA