Plastic Encapsulated NPN Transistor GOODWORK D882P with TO126 Package Offering Electrical Performance

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Product Description

Product Overview

The D882P is an NPN Plastic-Encapsulated Transistor in a TO-126 package. It is designed for general-purpose applications requiring specific electrical characteristics and power handling capabilities.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic-Encapsulated
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Value	Unit	Test Conditions
Collector-Base Voltage	VCBO	40	V	TA=25,unless otherwise specified
Collector-Emitter Voltage	VCEO	30	V	TA=25,unless otherwise specified
Emitter-Base Voltage	VEBO	6	V	TA=25,unless otherwise specified
Collector Current -Continuous	IC	3	A	TA=25,unless otherwise specified
Collector Current -Pulsed	PD	1.25	W	TA=25,unless otherwise specified
Thermal Resistance, Junction to Ambient	RJA	100	/W	TA=25,unless otherwise specified
Operation Junction and Storage Temperature Range	TJ,Tstg	-55-150		TA=25,unless otherwise specified
Collector-base breakdown voltage	V(BR)CBO	40	V	IC =100A ,IE =0
Collector-emitter breakdown voltage	V(BR)CEO	30	V	IC =10mA , IB =0
Emitter-base breakdown voltage	V(BR)EBO	6	V	IE =100A,IC =0
Collector cut-off current	ICBO	1	A	VCB =40V, IE =0
Collector cut-off current	ICEO	10	A	VCE =30V, IB =0
Emitter cut-off current	IEBO	1	A	VEB =6V, IC =0
DC current gain	hFE	60-400		VCE = 2V, IC = 1A
Collector-emitter saturation voltage	VCE(sat)	0.5	V	IC =2A, IB =0.2A
Base-emitter saturation voltage	VBE(sat)	1.5	V	IC =2A, IB =0.2A
Transition frequency	fT	50-80	MHz	VCE =5V, IC =0.1A f =10MHz
hFE Rank	R	60-120
hFE Rank	O	100-200
hFE Rank	P	160-320
hFE Rank	GR	200-400