general purpose NPN transistor for switching and amplification GOODWORK MMBT3904 providing stable circuit operation

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Product Description

MMBT3904 NPN TRANSISTOR

The MMBT3904 is an NPN transistor designed for general-purpose applications. It offers complementary functionality to the MMBT3906, providing flexibility in circuit design. This transistor is suitable for various switching and amplification tasks.

Product Attributes

Marking Type number: MMBT3904
Marking code: 1AM

Technical Specifications

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
VCBO	CollectorBase Voltage				60	V
VCEO	CollectorEmitter Voltage				40	V
VEBO	EmitterBase Voltage				6	V
IC	Collector Current Continuous				200	mA
PC	Collector Power Dissipation	(Ta=25)			200	mW
RthJA	Thermal Resistance From Junction To Ambient			625	/W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55		+150
V(BR)CBO	Collector-base breakdown voltage	IC = 10uA, IE = 0	60			V
V(BR)CEO	Collector-emitter breakdown voltage	IC = 1 mA, IB = 0	40			V
V(BR)EBO	Emitter-base breakdown voltage	IE = 10uA, IC = 0	6			V
ICEX	Collector cut-off current	VCB = 60V, IE = 0			100	nA
hFE1	DC current gain	VCE = 30V, VEB(off) =3V		100
VCE(sat)	Collector-emitter saturation voltage	IC = 50mA, IB = 5mA		0.3		V
VBE(sat)	Base-emitter saturation voltage	IC = 50mA, IB = 5mA		0.95		V
fT	Transition frequency	VCE = 1V, IC = 100mA		300		MHz
ICBO	Collector cut-off current	VCB = 60V, IE = 0			100	nA
IEBO	Emitter cut-off current	VEB = 5V, IC =0			100	nA
hFE2	DC current gain	VCE = 1V, IC=10mA		100	300
hFE3	DC current gain	VCE = 1V, IC=10mA		100	300
td	Delay time	VCC = 3V, IC = 10mA		35		ns
tr	Rise time	IB1=1mA IB2= 60mA		35		ns
ts	Storage time	IC = 50mA, IB = 5mA		200		ns
tf	Fall time	VCE = 20V, IC = 10mA, f=100MHz		50		ns