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High Saturation Voltage PNP Transistor GOODWORK FMMT591 with Low Equivalent On Resistance and SOT 23

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Product Description

Product Overview

The FMMT591 is a PNP Silicon Epitaxial Planar Transistor designed for high saturation voltage and excellent HFE linearity. It is complementary to the FMMT491 and features a low equivalent on-resistance with RSAT = 188m. The transistor is characterized for high current gain hold-up up to -2A.

Product Attributes

  • Type No.: FMMT591
  • Marking: 591
  • Package Code: SOT-23

Technical Specifications

ParameterSymbolTest ConditionsMINTYPMAXUNIT
Collector-Base VoltageVCBO-80V
Collector-Emitter VoltageVCEO-60V
Emitter-Base VoltageVEBO-5V
Collector Current - ContinuousIC-1A
Collector Current - PeakICM-2A
Power DissipationPD*1500mW
Thermal Resistance Junction-to-AirRJA*2191C/W
Thermal Resistance Junction-to-CaseRJC*274C/W
Thermal Resistance Junction-to-LeadRJL*245C/W
Junction and Storage TemperatureTJ, TSTG-55+150C
Collector-base breakdown voltageV(BR)CBOIC=-100A,IE=0-80V
Collector-emitter breakdown voltageV(BR)CEOIC=-10mA,IB=0-60V
Emitter-base breakdown voltageV(BR)EBOIE=-100A,IC=0-5V
Collector cut-off currentICBOVCB=-60V,IE=0-0.1A
Emitter cut-off currentIEBOVEB=-4V,IC=0-0.1A
DC current gainhFEVCE=-5V,IC=-1mA100
VCE=-5V,IC=-500mA100
VCE=-5V,IC=-1A80
VCE=-5V,IC=-2A15
Collector-emitter saturation voltageVCE(sat)IC=-500mA, IB=-50mA-0.3V
IC=-1A, IB= -100mA-0.6V
Base-emitter saturation voltageVBE(sat)IC=-1A, IB= -100mA-1.2V
Base-emitter voltageVBEVCE=-5V,IC=-1A-1V
Transition frequencyfTVCE=-10V, IC= -50mA, f=100MHz150MHz
Collector output capacitanceCobVCB=-10V,IE=0,f=1MHz10pF

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
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