Low VCE sat silicon NPN transistor GOODWORK PBSS4160T suitable for general purpose switching and LCD backlighting

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Product Description

Product Description

Silicon NPN transistor in a SOT-23 Plastic Package. Features low VCE(sat) and high current capabilities. Suitable for general purpose switching and muting, LCD back-lighting, and supply line switching circuits.

Product Attributes

Brand: DEMACHEL
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Voltage	VCBO				80	V
Collector to Emitter Voltage	VCEO				60	V
Emitter to Base Voltage	VEBO				5	V
Collector Current	IC				1	A
Peak Collector Current	ICM				2	A
Base Current	IB				0.3	A
Peak Base Current	IBM				1	A
Collector Power Dissipation	PC				400	mW
Junction Temperature	Tj				150
Storage Temperature Range	Tstg		-55		150
Collector Cut-Off Current	ICBO	VCB=60V, IE=0A			100	nA
Collector Cut-Off Current	ICBO	VCB=60V, IE=0A, Tj=150			50	A
Collector Cut-Off Current	ICES	VCE=60V, VBE=0V			100	nA
Emitter Cut-Off Current	IEBO	VEB=5.0V, IC=0A			100	nA
DC Current Gain	hFE(1)	VCE=5.0V, IC=500mA	200		350
DC Current Gain	hFE(2)	VCE=5.0V, IC=1.0mA	250		400
DC Current Gain	hFE(3)	VCE=5.0V, IC=1.0A	100		150
Collector-Emitter Saturation Voltage	VCE(sat)(1)	IC=100mA, IB=1.0mA		90	110	mV
Collector-Emitter Saturation Voltage	VCE(sat)(2)	IC=500mA, IB=50mA		110	140	mV
Collector-Emitter Saturation Voltage	VCE(sat)(3)	IC=1.0A, IB=100mA		200	250	mV
Base-Emitter Saturation Voltage	VBE(sat)	IC=1.0A, IB=50mA		0.95	1.1	V
Base-Emitter Voltage	VBE	VCE=5.0V, IC=1.0A		0.82	0.9	V
Transition Frequency	fT	VCE=10V, IC=50mA, f=100MHz		150	220	MHz
Output Capacitance	CC	VCB=10V, IE=0, f=1.0MHz		5.5	10	pF