Electronic circuits enhanced by GOODWORK FMMT493 NPN transistor designed for switching and amplifier

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Product Description

FMMT493 - SOT-23 NPN Transistor

This NPN transistor is designed for switching and AF amplifier applications. It offers reliable performance in various electronic circuits.

Parameter	Symbol	Min.	Max.	Unit	Conditions
Collector Base Voltage	VCBO		120	V
Collector Emitter Voltage	VCEO		100	V
Emitter Base Voltage	VEBO		5	V
Collector Current	IC		1	A
Maximum Power Dissipation	PD		250	mW	@ 25 ambient temperature
Junction Temperature	TJ		150
Storage Temperature Range	TSTG	-55	+150
DC Current Gain	HFE	100	300		VCE = 10 V, IC = 1 mA
		100	--		VCE = 10 V, IC = 250 mA
		60	--		VCE = 10 V, IC = 500 mA
Collector Base Cutoff Current	ICBO		100	nA	VCB = 100V
Emitter Base Cutoff Current	IEBO		100	nA	VEB = 4 V
Collector Base Breakdown Voltage	V(BR)CBO	120	--	V	IC = 100 A
Collector Emitter Breakdown Voltage	V(BR)CEO	100	--	V	IC = 1 mA
Emitter Base Breakdown Voltage	V(BR)EBO	5	--	V	IE = 100 A
Collector Emitter Saturation Voltage	VCE(sat)	--	300	mV	IC = 500 mA, IB = 50 mA
Collector Emitter Saturation Voltage	VCE(sat)	--	600	mV	IC = 1 A, IB = 100 mA
Base Emitter Saturation Voltage	VBE(sat)	--	1.15	V	IC = 1 A, IB = 100 mA
Base Emitter On Voltage	VBE(on)	--	1	V	VCE = 10 V, IC = 1 A
Transition Frequency	FT	150	--	MHz	VCE = 10 V, IC = 50 mA, f = 100 MHz
Output Capacitance	Cob	--	10	pF	VCB = 10 V, f = 1 MHz